Reduction of current instabilities in silicon nanogaps
Artikel i vetenskaplig tidskrift, 2006

Silicon nanogaps are electrodes for connecting nanoscale elements to silicon technology. Two silicon electrodes are separated by a thin silicon dioxide layer, which is removed by selective etching to create a nanometer sized accessible gap. Parasitic gap currents with large instabilities occur after the etching. These are compared to the instabilities in ordinary MOS (metal oxide silicon) devices after soft breakdown. Clear similarities are seen when subjecting the devices to constant voltage stress, storing them and annealing them. We discuss a percolation-based model for the instable current, in which the percolation clusters are defects in the oxide surface created during the etching, or possibly contaminating residuals from the same process. © 2006 Elsevier B.V. All rights reserved.

Författare

Jonas Berg

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fasta tillståndets elektronik

Per Lundgren

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fasta tillståndets elektronik

Peter Enoksson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fasta tillståndets elektronik

Microelectronic Engineering

0167-9317 (ISSN)

Vol. 83 2469-2474

Ämneskategorier

Fysik

DOI

10.1016/j.mee.2006.05.001