Impedance characteristics and parasitic speed limitations of high speed 850 nm VCSELs
Artikel i vetenskaplig tidskrift, 2009

Abstract—The impedance characteristics of high-speed oxideconfined 850-nm vertical-cavity surface-emitting lasers have been studied with the aim of identifying the importance of device parasitics for the modulation bandwidth. Through equivalent circuit modeling, it is confirmed that device parasitics have a major impact on the bandwidth and the importance of each individual circuit element has been investigated. According to the extrapolation of the parameters derived from S11 measurements below 20 GHz towards higher frequencies and assuming that the mesa capacitance can be reduced by adding a few extra oxide layers without significantly affecting series resistance, our model predicts that the 3-dB parasitic frequency can be increased from 22 to above 30 GHz. Accounting also for bandwidth limitations due to thermal effects, we expect an increase of the modulation bandwidth of several gigahertz which may enable direct current modulation at 40 Gb/s.

vertical-cavity surface-emitting laser

high speed

VCSEL

modulation bandwidth

Electrical parasitics

impedance

Författare

Yiyu Ou

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Johan Gustavsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Petter Westbergh

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Åsa Haglund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

IEEE Photonics Technology Letters

1041-1135 (ISSN)

Vol. 21 1840-

Ämneskategorier

Annan teknik

Atom- och molekylfysik och optik

Annan fysik

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2017-10-07