Processing and Characterization of AlGaN/GaN HEMTs on Sapphire
Licentiatavhandling, 2004
Författare
Vincent Desmaris
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
High CW power 0.3 um gate AlGaN/GaN HEMTs grown by MBE on sapphire
Materials Science Forum,; Vol. 457-460(2004)p. 1629-
Paper i proceeding
Low-resistance Si/Ti/Al/Ni/Au multilayer ohmic contacts to undoped AlGaN/GaN heterostructures
Electrochemical and Solid-State Letters,; Vol. 7(2004)p. G72-
Artikel i vetenskaplig tidskrift
C-Band Linear Resistive Wide Bandgap FET Mixers
IEEE MTT-S International Microwave Symposium Digest,; Vol. 2(2003)p. 8-
Paper i proceeding
Ämneskategorier
Övrig annan teknik
Annan elektroteknik och elektronik
Technical report L - School of Electrical and Computer Engineering, Chalmers University of Technology. : 476L