Processing and Characterization of AlGaN/GaN HEMTs on Sapphire
Licentiatavhandling, 2004

Författare

Vincent Desmaris

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

High CW power 0.3 um gate AlGaN/GaN HEMTs grown by MBE on sapphire

Materials Science Forum,; Vol. 457-460(2004)p. 1629-

Paper i proceeding

Low-resistance Si/Ti/Al/Ni/Au multilayer ohmic contacts to undoped AlGaN/GaN heterostructures

Electrochemical and Solid-State Letters,; Vol. 7(2004)p. G72-

Artikel i vetenskaplig tidskrift

C-Band Linear Resistive Wide Bandgap FET Mixers

IEEE MTT-S International Microwave Symposium Digest,; Vol. 2(2003)p. 8-

Paper i proceeding

Research and development of AlGaN/GaN HEMTs

GHZ2001,; (2001)

Paper i proceeding

Ämneskategorier

Övrig annan teknik

Annan elektroteknik och elektronik

Technical report L - School of Electrical and Computer Engineering, Chalmers University of Technology. : 476L

Mer information

Skapat

2017-10-07