Effects of AlN layer and impurities on optical properties of GaN
Artikel i vetenskaplig tidskrift, 2005

The effects of the incorporated oxygen and the different buffer layers on the optical properties and surface morphology of GaN were studied. The results show that the decrease of the concentration of the incorporated oxygen has no effect on the surface morphology, but improves the optical properties. While the introduction of the AlN buffer layer makes not only the surface morphology but also the optical properties improve. Both the oxygen contamination from the nitrogen source and the resulted morphology are directly related to the line width of the low-temperature photoluminescence (PL) spectra.


J. H. Yang

J. Gong

L. L. Yang

H. G. Fan

Y. J. Zhang

Otto Zsebök

Chalmers, Mikroteknologi och nanovetenskap (MC2)

G. Chen

Chemical Research in Chinese Universities

1005-9040 (ISSN)

Vol. 21 1 78-82


Elektroteknik och elektronik

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