Active Region Design for High-Speed 850-nm VCSELs
Artikel i vetenskaplig tidskrift, 2010

Higher speed short-wavelength (850 nm) VCSELs are required for future high-capacity, short-reach data communication links. The modulation bandwidth of such devices is intrinsically limited by the differential gain of the quantum wells (QWs) used in the active region. We present gain calculations using an 8-band k.p Hamiltonian which show that the incorporation of 10% In in an InGaAs/AlGaAs QW structure can approximately double the differential gain compared to a GaAs/AlGaAs QW structure, with little additional improvement achieved by further increasing the In composition in the QW. This improvement is confirmed by extracting the differential gain value from measurements of the modulation response of VCSELs with optimized InGaAs/AlGaAs QW and conventional GaAs/AlGaAs QW active regions. Excellent agreement is obtained between the theoretically and experimentally determined values of the differential gain, confirming the benefits of strained InGaAs QW structures for high-speed 850-nm VCSEL applications.

surface-emitting lasers

Differential gain

vertical-cavity surface-emitting laser

high speed

high-efficiency

gbit/s

quantum-well lasers

(VCSEL)

Författare

S. B. Healy

Tyndall National Institute at National University of Ireland, Cork

E. P. O'Reilly

University College Cork

Tyndall National Institute at National University of Ireland, Cork

Johan Gustavsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Petter Westbergh

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Åsa Haglund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

A. Joel

IQE Europe Ltd.

IEEE Journal of Quantum Electronics

0018-9197 (ISSN)

Vol. 46 506-512

Ämneskategorier

Annan teknik

Fysik

DOI

10.1109/JQE.2009.2038176