Field and current-induced magnetization reversal studied through spatially resolved point-contacts
Artikel i vetenskaplig tidskrift, 2010

We present results from scanning tunneling microscopy based point-contact measurements of the local resistance in octagon shaped, Co(20 nm)/Cu (5 nm)/Fe(19)Ni(81)(2.5 nm) spin-valve rings. Through this technique one can detect the magnetoresistance with spatial resolution, and link it to magnetic domain wall motion within the ring. Measurements with varying currents indicate current-induced effects leading to offsets in the magnetic fields required for magnetic switching. The offsets can be attributed to current-induced spin-transfer torque effects for the thin Fe(19)Ni(81) layer and to Oersted field effects for the thick Co layer.

Författare

Magne Saxegaard

DeZheng Yang

Erik Wahlström

Rimantas Brucas

Chalmers, Teknisk fysik, Fasta tillståndets fysik

Maj Hanson

Chalmers, Teknisk fysik, Fasta tillståndets fysik

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 107 10 103909-

Ämneskategorier

Fysik

DOI

10.1063/1.3407539