A highly efficient 1-GHz, 15-W power amplifier design based on a 50-V LDMOS transistor
Paper i proceeding, 2010

We present a 15-W, I-GHz harmonically tuned power amplifier (PA) with a power added efficiency (PAE) of 75%. The PA design is based on a packaged 50-V Si-LDMOS engineering sample. The PAE is maximized by an appropriate tuning of the fundamental and second harmonics, while the higher harmonics are shortened by the parasitic drain-source capacitance. The PA design is based on a simplified transistor model which is optimized for harmonically tuned PAs. The model parameters are extracted from IV- and S-parameter measurements of the packaged LDMOS device. A good agrement between the simulation and measurement results shows the accuracy of the modeling and PA design procedure. © 2010 IEEE.

Författare

Peter Singerl

Infineon Technologies

Christian Fager

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

Z Wang

Infineon Technologies

C Schuberth

Technische Universität Wien

F. Dielacher

Infineon Technologies

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

1102-1105 5518057

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/MWSYM.2010.5518057

ISBN

978-142447732-6