Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature
Artikel i vetenskaplig tidskrift, 2010

We report on the hot-wall MOCVD growth of Mg-doped Alx Ga1–xN layers with an Al content as high as x ∼ 0.85. After subjecting the layers to post-growth in-situ annealing in nitrogen in the growth reactor, a room temperature resistivity of 7 kΩ cm was obtained indicating an enhanced p-type conductivity compared to published data for Alx Ga1–xN layers with a lower Al content of x ∼ 0.70 and a room temperature resistivity of about 10 kΩ cm. It is believed that the enhanced p-type conductivity is a result of reduced compensation by native defects through growth conditions enabled by the distinct hot-wall MOCVD system.

high-Al-content AlGaN

epitaxy

electrical properties

MOCVD

p-type semiconductors

Författare

Anelia Kakanakova-Georgieva

Linköpings universitet

Daniel Nilsson

Linköpings universitet

Martin Stattin

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Urban Forsberg

Linköpings universitet

Åsa Haglund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Erik Janzén

Linköpings universitet

Physica Status Solidi - Rapid Research Letetrs

1862-6254 (ISSN) 1862-6270 (eISSN)

Vol. 4 311-313

Ämneskategorier

Telekommunikation

Den kondenserade materiens fysik

DOI

10.1002/pssr.201004290