Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
Artikel i vetenskaplig tidskrift, 2011

We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 1010 in the Hall resistance-quantization measurements.

resistance standard

quantum capacitance

gas

Författare

Tjbm Janssen

A.Y. Tzalenchuk

R. Yakimova

Sergey Kubatkin

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Samuel Lara Avila

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

S. Kopylov

V. I. Fal'ko

Physical Review B - Condensed Matter and Materials Physics

1098-0121 (ISSN)

Vol. 83

New Electronics Concept: Wafer-Scale Epitaxial Graphene (ConceptGraphene)

Europeiska kommissionen (FP7), 2010-10-01 -- 2013-09-30.

Ämneskategorier

Fysik

DOI

10.1103/PhysRevB.83.233402