Effect of interface roughness on acoustic loss in tunable thin film bulk acoustic wave resonators
Artikel i vetenskaplig tidskrift, 2011

Tunable 5.2 GHz bulk acoustic wave resonators utilizing Ba(x)Sr(1-x)TiO(3) ferroelectric films with similar intrinsic properties but different interface roughness are fabricated and characterized. Increase in roughness from 3.2 nm up to 6.9 nm results in reduction in Q-factor from 350 down to 150 due to extrinsic acoustic losses caused by wave scattering at reflections from rough interfaces and other mechanisms associated with roughness. The increased roughness is a result of distortion of Pt bottom electrode caused by formation of heterogeneous enclosures of TiO(2-x) in the Pt layer. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3610513]

Författare

Andrei Vorobiev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

John Berge

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Spartak Gevorgian

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Markus Löffler

Chalmers, Teknisk fysik, Mikroskopi och mikroanalys

Eva Olsson

Chalmers, Teknisk fysik, Mikroskopi och mikroanalys

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 110 2 024116

Ämneskategorier

Fysik

DOI

10.1063/1.3610513

Mer information

Skapat

2017-10-08