Carbon Nanotube Field Effect Transistors with Suspended Graphene Gates
Artikel i vetenskaplig tidskrift, 2011

Novel field effect transistors with suspended graphene gates are demonstrated. By incorporating mechanical motion of the gate electrode, it is possible to improve the switching characteristics compared to a static gate, as shown by a combination of experimental measurements and numerical simulations. The mechanical motion of the graphene gate is confirmed by using atomic force microscopy to directly measure the electrostatic deflection. The device geometry investigated here can also provide a sensitive measurement technique for detecting high-frequency motion of suspended membranes as required, e.g., for mass sensing.

resonators

Carbon nanotube

sheets

field effect transistor

electrode

graphene

movable gate

performance

monolayer graphene

Författare

J. Svensson

Lunds universitet

N. Lindahl

Göteborgs universitet

H. Yun

Konkuk University

M. Seo

Konkuk University

Daniel Midtvedt

Chalmers, Teknisk fysik, Kondenserade materiens teori

Yury Tarakanov

Chalmers, Teknisk fysik, Kondenserade materiens teori

Niclas Lindvall

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

O. Nerushev

University of Edinburgh

Jari Kinaret

Chalmers, Teknisk fysik, Kondenserade materiens teori

SangWook Lee

Konkuk University

Eleanor E B Campbell

University of Edinburgh

Konkuk University

Nano Letters

1530-6984 (ISSN) 1530-6992 (eISSN)

Vol. 11 9 3569-3575

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Annan fysik

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1021/nl201280q