Chemical vapor deposition of nanocrystalline graphene directly on arbitrary high-temperature insulating substrates
Paper i proceeding, 2012

Large area uniform nanocrystalline graphene is grown by chemical vapor deposition on arbitrary insulating substrates that can survive ∼1000°C. The as-synthesized graphene is nanocrystalline with a domain size in the order of ∼10 nm. The material possesses a transparency and conductivity similar to standard graphene fabricated by exfoliation or catalysis. A noncatalytic mechanism is proposed to explain the experimental phenomena. The developed technique is scalable and reproducible, compatible with the existing semiconductor technology, and thus can be very useful in nanoelectronic applications such as transparent electronics, nanoelectromechanical systems, as well as molecular electronics.

chemical vapor deposition

nanoelectronics

insulator

Graphene

Författare

Jie Sun

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Niclas Lindvall

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

M. T. Cole

University of Cambridge

K. B. K. Teo

AIXTRON Nanoinstruments Ltd.

Avgust Yurgens

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems. NEMS 2012, Kyoto, 5 - 8 March 2012

11-14

Styrkeområden

Nanovetenskap och nanoteknik

Infrastruktur

Nanotekniklaboratoriet

Ämneskategorier

Kemi

DOI

10.1109/NEMS.2012.6196711

ISBN

978-146731124-3