A method to lower VCO phase noise by using HBT darlington pair
Paper i proceeding, 2012

The paper presents a novel method to enhance tank voltage swing in LC VCOs design using bipolar transistor. The method is successfully demonstrated in an InGaP/GaAs HBT MMIC process. A gm-boosted VCO and a modified version, using Darlington-pair transistors, are compared. The latter exhibits lower phase noise, increased tuning range, and less variation in output power. The gm-boosted VCO has tuning range of 22.8% centered at 5.7GHz and phase noise ranging from 103 to 95 dBc/Hz at offset frequency of 100kHz. The modified version using Darlington pair has tuning range of 26% centered at 5.9 GHz and phase noise ranging from 103.5 to 98.5 dBc/Hz at offset frequency of 100kHz.

Darlington pair

MMIC

VCO

Phase-noise

HBT

Författare

Szhau Lai

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

M. Bao

Chalmers

Dan Kuylenstierna

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

6259421

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/MWSYM.2012.6259421

ISBN

978-146731087-1

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Senast uppdaterat

2018-09-10