Dual pass electron beam writing of bit arrays with sub-100 nm bits on imprint lithography masters for patterned media production
Paper i proceeding, 2003

A model and experimental results of a new method for exposing bit arrays with electron beam lithography are presented. The method allows the reduction of the amount of pattern data by orders of magnitude. The method utilises two overlapped exposures. In the first exposure a 1-D array of parallel stripes is written and in the second exposure another I-D array of parallel stripes orthogonal to the first ones. Exposure dose is chosen so that after development only the areas where a positive resist have been subjected to overlapped exposure are fully developed. The bit size is determined by the widths of the stripes. In order to compensate for an approximately 50% loss of contrast a contrast enhancement scheme utilizing a trilayer resist was used.

nanoimprint litography

Electron beam lithography

pattern transfer

Författare

Alex Bogdanov

Obducat Technologies AB

Tommy Holmqvist

Obducat Technologies AB

Piotr Jedrasik

Maskinkonstruktion och design, MC2 process laboratorium

Bengt Nilsson

Maskinkonstruktion och design, MC2 process laboratorium

Microelectronic Engineering

0167-9317 (ISSN)

Vol. 67-68 381-389

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1016/S0167-9317(03)00093-5