Unusual thermopower of inhomogeneous graphene grown by chemical vapor deposition
Artikel i vetenskaplig tidskrift, 2014

We report on thermopower (TEP) and resistance measurements of inhomogeneous graphene grown by chemical vapor deposition (CVD). Unlike the conventional resistance of pristine graphene, the gate-dependent TEP shows a large electron-hole asymmetry. This can be accounted for by inhomogeneity of the CVD-graphene where individual graphene regions contribute with different TEPs. At the high magnetic field and low temperature, the TEP has large fluctuations near the Dirac point associated with the disorder in the CVD-graphene. TEP measurements reveal additional characteristics of CVD-graphene, which are difficult to obtain from the measurement of resistance alone.

fluctuations

asymmetry

thermopower

chemical vapor deposition

graphene

Författare

Youngwoo Nam

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Jie Sun

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Niclas Lindvall

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Seung Jae Yang

Seoul National University

Chong Rae Park

Seoul National University

YungWoo Park

Seoul National University

Avgust Yurgens

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 104 2 021902 - 021902

Styrkeområden

Nanovetenskap och nanoteknik

Materialvetenskap

Fundament

Grundläggande vetenskaper

Ämneskategorier

Nanoteknik

Den kondenserade materiens fysik

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1063/1.4861745

Mer information

Skapat

2017-10-08