Express Optical Analysis of Epitaxial Graphene on SiC: Impact of Morphology on Quantum Transport
Artikel i vetenskaplig tidskrift, 2013

We show that inspection with an optical microscope allows surprisingly simple and accurate identification of single and multilayer graphene domains in epitaxial graphene on silicon carbide (SiC/G) and is informative about nanoscopic details of the SiC topography, making it ideal for rapid and noninvasive quality control of as-grown SiC/G. As an illustration of the power of the method, we apply it to demonstrate the correlations between graphene morphology and its electronic properties by quantum magneto-transport.

SIO2

electron transport

V49

LAYER GRAPHENE

PHASE

graphene

graphene characterization

REIBL N

P6

1984

OPTICS COMMUNICATIONS

SINGLE-LAYER

optical microscopy

TRANSISTORS

Epitaxial graphene

Författare

Thomas Yager

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Arseniy Lartsev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Sumedh Mahashabde

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Sophie Charpentier

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Dejan Davidovikj

Chalmers, Mikroteknologi och nanovetenskap (MC2)

Andrey Danilov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

R. Yakimova

Linköpings universitet

V. Panchal

Royal Holloway University of London

National Physical Laboratory

O. Kazakova

National Physical Laboratory

A.Y. Tzalenchuk

National Physical Laboratory

Royal Holloway University of London

Samuel Lara Avila

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Sergey Kubatkin

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Nano Letters

1530-6984 (ISSN) 1530-6992 (eISSN)

Vol. 13 4217-4223

Ämneskategorier

Nanoteknik

DOI

10.1021/nl402347g