Surface potential at a ferroelectric grain due to asymmetric screening of depolarization fields
Artikel i vetenskaplig tidskrift, 2014

Nonlinear screening of electric depolarization fields, generated by a stripe domain structure in a ferroelectric grain of a polycrystalline material, is studied within a semiconductor model of ferroelectrics. It is shown that the maximum strength of local depolarization fields is rather determined by the electronic band gap than by the spontaneous polarization magnitude. Furthermore, field screening due to electronic band bending and due to presence of intrinsic defects leads to asymmetric space charge regions near the grain boundary, which produce an effective dipole layer at the surface of the grain. This results in the formation of a potential difference between the grain surface and its interior of the order of 1V, which can be of either sign depending on defect transition levels and concentrations. Exemplary acceptor doping of BaTiO3 is shown to allow tuning of the said surface potential in the region between 0.1 and 1.3V. (C) 2014 AIP Publishing LLC.







Y.A. Genenko

Chalmers University of Technology

O. Hirsch

Chalmers University of Technology

Eidgenössische Technische Hochschule Zürich (ETH)

Paul Erhart

Chalmers, Teknisk fysik, Material- och ytteori

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 115 104102