Difference in charge transport properties of Ni-Nb thin films with native and artificial oxide
Artikel i vetenskaplig tidskrift, 2015

Here, we report on the properties of native and artificial oxide amorphous thin film on a surface of an amorphous Ni-Nb sample. Careful measurements of local current-voltage characteristics of the system Ni-Nb / NiNb oxide/Pt, were carried out in contact mode of an atomic force microscope. Native oxide showed n-type conductivity, while in the artificial one exhibited p-type one. The shape of current-voltage characteristic curves is unique in both cases and no analogical behavior is found in the literature. X-ray photoelectron spectroscopy (XPS) measurements were used to detect chemical composition of the oxide films and the oxidation state of the alloy components. Detailed analysis of the XPS data revealed that the structure of natural Ni-Nb oxide film consists of Ni-NbOx top layer and nickel enriched bottom layer which provides n-type conductivity. In contrast, in the artificial oxide film Nb is oxidized completely to Nb2O5, Ni atoms migrate into bulk Ni-Nb matrix. Electron depletion layer is formed at the Ni-Nb/Nb2O5 interface providing ptype conductivity.


Artem Trifonov

Moscow State University

Alexander Lubenchenko

National Research University Moscow Power Engineering Institute

V.I. Polkin

National University of Science & Technology (MISIS)

Alexey Pavolotskiy

Chalmers, Rymd- och geovetenskap, Avancerad mottagarutveckling

S.V. Ketov

Tohoku University

Dmitry Louzguine-Luzgin

Tohoku University

Journal of Applied Physics

0021-8979 (ISSN) 1089-7550 (eISSN)

Vol. 117 125704 1-6 125704


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