Influence of laser annealing on SiOx films properties
Artikel i vetenskaplig tidskrift, 2015
The interaction of laser irradiation with SiOx films, and the process of decomposition of SiOx on SiO2 and Si nanocrystals under the influence of laser irradiation are investigated. The mathematical modeling of temperature distribution in a c-Si wafer as well as on its surface is carried out. It is shown that laser pulses can efficiently heat up the samples of crystalline silicon. Using multi-pulse procedure, the temperature necessary for annealing can be achieved with lower intensity of laser irradiation. Experimental investigations of laser-annealed SiOx films allowed determining their transformation with the formation of nanoislands. It was concluded that the surface topology, dielectric matrix structure, and electrical conductivity depend on laser beam intensity during the annealing process.
Nanocrystal
Physics
OPTICAL-PROPERTIES
RTUGAL
CRYSTALLIZATION
MEMORY
THIN-FILMS
Coatings & Films
Applied
Thermal conductivity equation
Laser annealing
SILICON NANOCRYSTALS
Physical
P444
FRANCE
RASBOURG
PHOTOLUMINESCENCE
DEPOSITION
V636-637
Materials Science
P484
Condensed Matter
Chemistry
LIGHT
Silicon oxide
V69
Physics
Författare
O. O. Gavrylyuk
National Academy of Sciences in Ukraine
O. Y. Semchuk
National Academy of Sciences in Ukraine
O. V. Steblova
National Academy of Sciences in Ukraine
A. A. Evtukh
National Academy of Sciences in Ukraine
L. L. Fedorenko
National Academy of Sciences in Ukraine
O. L. Bratus
National Academy of Sciences in Ukraine
S. O. Zlobin
National Academy of Sciences in Ukraine
Magnus Karlsteen
Chalmers, Teknisk fysik, Kondenserade materiens fysik
Applied Surface Science
0169-4332 (ISSN)
Vol. 336 217-221Ämneskategorier
Den kondenserade materiens fysik
DOI
10.1016/j.apsusc.2014.11.066