Influence of laser annealing on SiOx films properties
Artikel i vetenskaplig tidskrift, 2015

The interaction of laser irradiation with SiOx films, and the process of decomposition of SiOx on SiO2 and Si nanocrystals under the influence of laser irradiation are investigated. The mathematical modeling of temperature distribution in a c-Si wafer as well as on its surface is carried out. It is shown that laser pulses can efficiently heat up the samples of crystalline silicon. Using multi-pulse procedure, the temperature necessary for annealing can be achieved with lower intensity of laser irradiation. Experimental investigations of laser-annealed SiOx films allowed determining their transformation with the formation of nanoislands. It was concluded that the surface topology, dielectric matrix structure, and electrical conductivity depend on laser beam intensity during the annealing process.

RTUGAL

PHOTOLUMINESCENCE

Applied

RASBOURG

THIN-FILMS

V636-637

Silicon oxide

Condensed Matter

Chemistry

Physical

DEPOSITION

OPTICAL-PROPERTIES

Coatings & Films

SILICON NANOCRYSTALS

Nanocrystal

P484

Thermal conductivity equation

FRANCE

LIGHT

Laser annealing

Materials Science

Physics

P444

MEMORY

Physics

CRYSTALLIZATION

V69

Författare

O. O. Gavrylyuk

National Academy of Sciences in Ukraine

O. Y. Semchuk

National Academy of Sciences in Ukraine

O. V. Steblova

National Academy of Sciences in Ukraine

A. A. Evtukh

National Academy of Sciences in Ukraine

L. L. Fedorenko

National Academy of Sciences in Ukraine

O. L. Bratus

National Academy of Sciences in Ukraine

S. O. Zlobin

National Academy of Sciences in Ukraine

Magnus Karlsteen

Chalmers, Teknisk fysik, Kondenserade materiens fysik

Applied Surface Science

0169-4332 (ISSN)

Vol. 336 217-221

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1016/j.apsusc.2014.11.066

Mer information

Senast uppdaterat

2020-12-04