Wafer-scale homogeneity of transport properties in epitaxial graphene on SiC
Artikel i vetenskaplig tidskrift, 2015

Magnetotransport measurements on Hall bar devices fabricated on purely monolayer epitaxial graphene on silicon carbide (SiC/G) show a very tight spread in carrier concentration and mobility across wafer-size dimensions. In contrast, SiC/G devices containing bilayer graphene domains display variations in their electronic properties linked to the amount of bilayer content. The spread in properties among devices patterned on the same SiC/G wafer can thus be understood by considering the inhomogeneous number of layers often grown on the surface of epitaxial graphene on SiC.

Författare

Thomas Yager

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Arseniy Lartsev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

R. Yakimova

Linköpings universitet

Samuel Lara Avila

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Sergey Kubatkin

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Carbon

0008-6223 (ISSN)

Vol. 87 C 409-414

Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)

Europeiska kommissionen (FP7), 2013-10-01 -- 2016-03-31.

Drivkrafter

Hållbar utveckling

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Nanoteknik

DOI

10.1016/j.carbon.2015.02.058