Defect/oxygen assisted direct write technique for nanopatterning graphene
Artikel i vetenskaplig tidskrift, 2015

High resolution nanopatterning of graphene enables manipulation of electronic, optical and sensing properties of graphene. In this work we present a straightforward technique that does not require any lithographic mask to etch nanopatterns into graphene. The technique relies on the damaged graphene to be etched selectively in an oxygen rich environment with respect to non-damaged graphene. Sub-40 nm features were etched into graphene by selectively exposing it to a 100 keV electron beam and then etching the damaged areas away in a conventional oven. Raman spectroscopy was used to evaluate the extent of damage induced by the electron beam as well as the effects of the selective oxidative etching on the remaining graphene.

Författare

A. Cagliani

Danmarks Tekniske Universitet (DTU)

Niclas Lindvall

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Mbbs Larsen

Danmarks Tekniske Universitet (DTU)

D. M. A. Mackenzie

Danmarks Tekniske Universitet (DTU)

B. S. Jessen

Danmarks Tekniske Universitet (DTU)

T. J. Booth

Danmarks Tekniske Universitet (DTU)

P. Boggild

Danmarks Tekniske Universitet (DTU)

Nanoscale

2040-3364 (ISSN)

Vol. 7 6271-6277

Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)

Europeiska kommissionen (FP7), 2013-10-01 -- 2016-03-31.

Drivkrafter

Hållbar utveckling

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Nanoteknik

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1039/c4nr07585d