Physics of a disordered Dirac point in epitaxial graphene from temperature-dependent magnetotransport measurements
Artikel i vetenskaplig tidskrift, 2015
We report a study of disorder effects on epitaxial graphene in the vicinity of the Dirac point by magnetotransport. Hall effect measurements show that the carrier density increases quadratically with temperature, in good agreement with theoretical predictions which take into account intrinsic thermal excitation combined with electron-hole puddles induced by charged impurities. We deduce disorder strengths in the range 10.2-31.2 meV, depending on the sample treatment. We investigate the scattering mechanisms and estimate the impurity density to be 3.0-9.1x10(10) cm(-2) for our samples. A scattering asymmetry for electrons and holes is observed and is consistent with theoretical calculations for graphene on SiC substrates. We also show that the minimum conductivity increases with increasing disorder strength, in good agreement with quantum-mechanical numerical calculations.
Physics
boron-nitride
scattering
transport
Författare
J. Huang
University of Oxford
J. A. Alexander-Webber
University of Oxford
A. M. R. Baker
University of Oxford
Tjbm Janssen
National Physical Laboratory (NPL)
A.Y. Tzalenchuk
Royal Holloway University of London
National Physical Laboratory (NPL)
V. Antonov
Royal Holloway University of London
Thomas Yager
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Samuel Lara Avila
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Sergey Kubatkin
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
R. Yakimova
Linköpings universitet
R. J. Nicholas
University of Oxford
Physical Review B - Condensed Matter and Materials Physics
24699950 (ISSN) 24699969 (eISSN)
Vol. 92 7 075407Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)
Europeiska kommissionen (EU) (EC/FP7/604391), 2013-10-01 -- 2016-03-31.
Styrkeområden
Nanovetenskap och nanoteknik
Ämneskategorier
Den kondenserade materiens fysik
DOI
10.1103/PhysRevB.92.075407