Effect of photon-assisted Andreev reflection in the accuracy of a SINIS turnstile
Artikel i vetenskaplig tidskrift, 2015

We consider a hybrid single-electron transistor constituted by a gate-controlled normal-metal island (N) connected to two voltage-biased superconducting leads (S) by means of two tunnel junctions (SINIS), operated as a turnstile. We show that the exchange of photons between this system and the high-temperature electromagnetic environment where it is embedded enhances Andreev reflection, thereby limiting the single-electron tunneling accuracy.

Författare

Angelo di Marco

Chalmers, Mikroteknologi och nanovetenskap (MC2), Tillämpad kvantfysik

V. F. Maisi

F. W. J. Hekking

J. Pekola

Physical Review B - Condensed Matter and Materials Physics

1098-0121 (ISSN)

Vol. 92

Ämneskategorier

Nanoteknik

DOI

10.1103/PhysRevB.92.094514