Effect of photon-assisted Andreev reflection in the accuracy of a SINIS turnstile
Artikel i vetenskaplig tidskrift, 2015

We consider a hybrid single-electron transistor constituted by a gate-controlled normal-metal island (N) connected to two voltage-biased superconducting leads (S) by means of two tunnel junctions (SINIS), operated as a turnstile. We show that the exchange of photons between this system and the high-temperature electromagnetic environment where it is embedded enhances Andreev reflection, thereby limiting the single-electron tunneling accuracy.

Författare

Angelo di Marco

Université Grenoble Alpes

V. F. Maisi

Centre for Metrology and Accreditation Finland

Aalto-Yliopisto

F. W. J. Hekking

Université Grenoble Alpes

J. Pekola

Aalto-Yliopisto

Physical Review B - Condensed Matter and Materials Physics

24699950 (ISSN) 24699969 (eISSN)

Vol. 92 9

Ämneskategorier

Nanoteknik

DOI

10.1103/PhysRevB.92.094514

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Senast uppdaterat

2019-09-03