A 2 GHz oscillator based on a solidly mounted thin film bulk acoustic wave resonator
Paper i proceeding, 2006

This paper describes the design and measurement of a 2 GHz oscillator based on a Solidly Mounted Thin Film Bulk Acoustic wave Resonator (SM TFBAR). The circuitry is patterned on an alumina substrate on which the transistors and capacitors are soldered. The SM TFBAR chip is integrated by means of wirebonding. The measured oscillator centre frequency is about 2.038 GHz with an output power of 0 dBm. © 2006 IEEE.

Författare

Martin Norling

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Johannes Enlund

Uppsala universitet

Spartak Gevorgian

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågs- och terahertzteknologi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Ilia Katardjiev

Uppsala universitet

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

Vol. 1 1813-1816 4015307

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/MWSYM.2006.249747

ISBN

0-7803-7542-5