A MMIC GaN HEMT Voltage-Controlled-Oscillator with high tuning linearity and low phase noise
Paper i proceeding, 2015

This paper presents a MMIC GaN HEMT Voltage- Controlled-Oscillator (VCO). The VCO is tunable between 6.45-7.55 GHz with good tuning linearity, average output power about 1 dBm, and a good phase noise with little variation over the tuning range. For a bias of Vd /Id = 6 V/33 mA, the measured phase noise is -98 dBc/Hz @ 100 kHz and -132 dBc/Hz @ 1 MHz offset frequencies, respectively. To the author's best knowledge, this is the lowest phase noise reported for a VCO in GaN HEMT technology with comparable oscillation frequency and tuning range. The 1 MHz offset phase noise is also comparable to state-of-the-art GaAs-InGaP HBT VCOs with similar tuning range.

phase noise

Voltage-Controlled-Oscillator

GaN

MMIC

HEMT

Författare

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2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015

Article number 7314478 7314478
978-147998494-7 (ISBN)

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier (SSIF 2011)

Annan elektroteknik och elektronik

DOI

10.1109/CSICS.2015.7314478

ISBN

978-147998494-7

Mer information

Skapat

2017-10-07