A MMIC GaN HEMT Voltage-Controlled-Oscillator with high tuning linearity and low phase noise
Paper i proceeding, 2015

This paper presents a MMIC GaN HEMT Voltage- Controlled-Oscillator (VCO). The VCO is tunable between 6.45-7.55 GHz with good tuning linearity, average output power about 1 dBm, and a good phase noise with little variation over the tuning range. For a bias of Vd /Id = 6 V/33 mA, the measured phase noise is -98 dBc/Hz @ 100 kHz and -132 dBc/Hz @ 1 MHz offset frequencies, respectively. To the author's best knowledge, this is the lowest phase noise reported for a VCO in GaN HEMT technology with comparable oscillation frequency and tuning range. The 1 MHz offset phase noise is also comparable to state-of-the-art GaAs-InGaP HBT VCOs with similar tuning range.

phase noise

Voltage-Controlled-Oscillator

GaN

MMIC

HEMT

Författare

Thi Ngoc Do Thanh

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Szhau Lai

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mikael Hörberg

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Dan Kuylenstierna

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015

Article number 7314478 7314478

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/CSICS.2015.7314478

ISBN

978-147998494-7