Structure and electron transport of strontium iridate epitaxial films
Artikel i vetenskaplig tidskrift, 2015

The crystallographic and electrophysical properties of epitaxial SrIrO3 films, in which the crystal lattice is deformed due to the mismatch between the lattice parameters of strontium iridate and the substrate, have been studied. Substrates (001) SrTiO3, (001) LaAlO3 + Sr2AlTaO6 (LSAT), (110) NdGaO3, and (001) LaAlO3 have been used. As a result of the deformation of the crystal lattice, the electrical resistivities of the films deposited on substrates with different lattice parameters differ by several times. The SrIrO3 films with thickness d = 90 nm, grown on SrTiO3 and LSAT substrates, have a nonmonotonic temperature dependence of the conductivity: type of the temperature dependence of the conductivity changes from metallic to dielectric at T (L) = 200-250 K. The electrical resistance of the films with thicknesses less than 20 nm on all the substrates decreases exponentially with increasing temperature.

Författare

Yu V. Kislinskiǐ

National Research University of Electronic Technology (MIET)

Russian Academy of Sciences

Gennady Ovsyannikov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

A. M. Petrzhik

National Research University of Electronic Technology (MIET)

K. Y. Constantinian

National Research University of Electronic Technology (MIET)

N. V. Andreev

National University of Science & Technology (MISIS)

T. A. Sviridova

National University of Science & Technology (MISIS)

Physics of the Solid State

1063-7834 (ISSN) 1090-6460 (eISSN)

Vol. 57 12 2519-2523

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1134/s1063783415120173

Mer information

Senast uppdaterat

2018-04-16