Recombination channels in optically excited graphene
Artikel i vetenskaplig tidskrift, 2015

We present a theoretical study on the efficiency of non-radiative recombination channels in optically excited graphene on a substrate. We find that depending on the strength of the excitation pulse and the dielectric constant of the applied substrate, either Auger or phonon-induced recombination prevails. The favorable conditions for Auger recombination are (i) strong excitation regime providing a large number of scattering partners and (ii) low-dielectric substrates, which only weakly screen the Coulomb interaction. The gained insights are important for achieving a population inversion in graphene that is temporally limited by the presented recombination channels.


Auger scattering

recombination channels

carrier dynamics

carrier-phonon scattering


Roland Jago

Chalmers, Teknisk fysik, Kondenserade materiens teori

T. Winzer

Technische Universität Berlin

Ermin Malic

Chalmers, Teknisk fysik, Kondenserade materiens teori

Physica Status Solidi (B): Basic Research

0370-1972 (ISSN) 1521-3951 (eISSN)

Vol. 252 11 2456-2460

Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)

Europeiska kommissionen (EU) (EC/FP7/604391), 2013-10-01 -- 2016-03-31.





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