20-Gb/s Modulation of Silicon-Integrated Short-Wavelength Hybrid-Cavity VCSELs
Artikel i vetenskaplig tidskrift, 2016

We investigate the dynamics of silicon-integrated 850-nm-wavelength hybrid-cavity vertical-cavity surface-emitting lasers (VCSELs). The VCSELs consist of a GaAs-based half-VCSEL attached to a dielectric distributed Bragg reflector on a silicon substrate using ultra-thin divinylsiloxane-bis-benzocyclobutene adhesive bonding. A 5-µm oxide aperture diameter VCSEL, with a small signal modulation bandwidth of 11 GHz, supports data transmission at bit rates up to 20 Gb/s. The modulation bandwidth and the large signal modulation characteristics are found to be impaired by the high thermal impedance.

semiconductor lasers

silicon photonics

High-speed modulation

vertical-cavity surface-emitting laser (VCSEL)

optical interconnects

large signal modulation

Författare

Emanuel Haglund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Sulakshna Kumari

Universiteit Gent

Petter Westbergh

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Johan Gustavsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Roel G. Baets

Universiteit Gent

Gunther Roelkens

Universiteit Gent

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

IEEE Photonics Technology Letters

1041-1135 (ISSN)

Vol. 28 8 856 - 859

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Ämneskategorier

Telekommunikation

Infrastruktur

Nanotekniklaboratoriet

DOI

10.1109/LPT.2016.2514699