VO2 TES as Room Temperature THz Detectors
Paper i proceeding, 2006
Abstract VOx materials hold very high potential to be used
as room temperature bolometer. A brief review on room temperature bolometers and VOx characteristics is presented.
The hysteretic metal-insulator transition behavior of a VOx
microbolometer has been investigated. An algebraic hysteresis model has been used to model the resistance-temperature characteristic of the bolometer. The magnetic limiting loop proximity (L2 P) hysteresis theory is modified to represent the VOx major and minor hysteresis loops. The responsivity of the bolometer is also calculated. Loop accommodation process is explained. Nonsymmetrical hysteretic behavior has also been discussed.