Impact of tunnel-barrier strength on magnetoresistance in carbon nanotubes
Artikel i vetenskaplig tidskrift, 2016

We investigate magnetoresistance in spin valves involving CoPd-contacted carbon nanotubes. Both the temperature and bias-voltage dependence clearly indicate tunneling magnetoresistance as the origin. We show that this effect is significantly affected by the tunnel-barrier strength, which appears to be one reason for the variation between devices previously detected in similar structures. Modeling the data by means of the scattering matrix approach, we find a nontrivial dependence of the magnetoresistance on the barrier strength. Furthermore, an analysis of the spin precession observed in a nonlocal Hanle measurement yields a spin lifetime of tau_s=1.1  ns, a value comparable with those found in silicon- or graphene-based spin-valve devices.

Författare

Caitlin Morgan

JARA - Fundamentals of Future Information Technologies

Forschungszentrum Jülich

Maciej Misiorny

Chalmers, Mikroteknologi och nanovetenskap (MC2), Tillämpad kvantfysik

D. Metten

Forschungszentrum Jülich

JARA - Fundamentals of Future Information Technologies

Universite de Strasbourg

Sebastian Heedt

JARA - Fundamentals of Future Information Technologies

Forschungszentrum Jülich

Thomas Schäpers

Forschungszentrum Jülich

JARA - Fundamentals of Future Information Technologies

Claus M. Schneider

JARA - Fundamentals of Future Information Technologies

Universitat Duisburg-Essen

Forschungszentrum Jülich

Carola Meyer

Forschungszentrum Jülich

Universitat Osnabruck

JARA - Fundamentals of Future Information Technologies

Physical Review Applied

2331-7019 (eISSN)

Vol. 5 054010- 054010

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Fysik

Den kondenserade materiens fysik

DOI

10.1103/PhysRevApplied.5.054010