Impact of tunnel-barrier strength on magnetoresistance in carbon nanotubes
Artikel i vetenskaplig tidskrift, 2016
We investigate magnetoresistance in spin valves involving CoPd-contacted carbon nanotubes. Both the temperature and bias-voltage dependence clearly indicate tunneling magnetoresistance as the origin. We show that this effect is significantly affected by the tunnel-barrier strength, which appears to be one reason for the variation between devices previously detected in similar structures. Modeling the data by means of the scattering matrix approach, we find a nontrivial dependence of the magnetoresistance on the barrier strength. Furthermore, an analysis of the spin precession observed in a nonlocal Hanle measurement yields a spin lifetime of tau_s=1.1 ns, a value comparable with those found in silicon- or graphene-based spin-valve devices.
Författare
Caitlin Morgan
Forschungszentrum Jülich
JARA - Fundamentals of Future Information Technologies
Maciej Misiorny
Chalmers, Mikroteknologi och nanovetenskap, Tillämpad kvantfysik
D. Metten
Université de Strasbourg
Forschungszentrum Jülich
JARA - Fundamentals of Future Information Technologies
Sebastian Heedt
Forschungszentrum Jülich
JARA - Fundamentals of Future Information Technologies
Thomas Schäpers
Forschungszentrum Jülich
JARA - Fundamentals of Future Information Technologies
Claus M. Schneider
Universität Duisburg-Essen
JARA - Fundamentals of Future Information Technologies
Forschungszentrum Jülich
Carola Meyer
Universität Osnabrück
Forschungszentrum Jülich
JARA - Fundamentals of Future Information Technologies
Physical Review Applied
2331-7019 (eISSN)
Vol. 5 5 054010- 054010Styrkeområden
Nanovetenskap och nanoteknik (SO 2010-2017, EI 2018-)
Ämneskategorier
Fysik
Den kondenserade materiens fysik
DOI
10.1103/PhysRevApplied.5.054010