Role of Nanoelectromechanical Switching in the Operation of Nanostructured Bi2Se3 Interlayers between Conductive Electrodes
Artikel i vetenskaplig tidskrift, 2016

We demonstrate a simple low-cost method of preparation of layered devices for opto- and thermoelectric applications. The devices consist Of a functional Bi2Se3 layer of randomly oriented nanoplates and flexible nanobelts enclosed between two flat indium tin oxide (ITO) electrodes. The number of functional interconnections between the ITO electrodes and correspondingly the efficiency of the device can be increased by gradual nanoelectromechanical (NEM) switching of flexible individual Bi2Se3 nanobelts in the circuit. NEM switching is achieved through applying an external voltage to the device. For the first time, we investigate in situ NEM switching and breakdown parameters of Bi2Se3 nanobelts, visualize the processes occurring in the device under the influence of applied external voltage, and establish the limitations to the possible operational conditions.

nanostructured interlayers

nanobelts

nanoelectromechanical switching

sandwich device

bismuth selenide

Författare

J. Kosmaca

Latvijas Universitate

J. Andzane

Latvijas Universitate

M. Baitimirova

Latvijas Universitate

Floriana Lombardi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

D. Erts

Latvijas Universitate

ACS Applied Materials & Interfaces

1944-8244 (ISSN) 1944-8252 (eISSN)

Vol. 8 19 12257-12262

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1021/acsami.6b00406

Mer information

Senast uppdaterat

2018-03-01