Resonant subgap current transport in Josephson field effect transistor
Artikel i vetenskaplig tidskrift, 2017

We study theoretically the current-voltage characteristics (IVCs) of the Josephson field effect transistor - a ballistic SNINS junction with superconducting (S) electrodes confining a planar normal-metal region (N), which is controlled by the gate-induced potential barrier (I). Using the computation technique developed earlier for long single-channel junctions in the coherent multiple Andreev reflection (MAR) regime, we find a significant difference of the subgap current structure compared to the subharmonic gap structure in tunnel junctions and atomic-size point contacts. For long junctions, whose lengths significantly exceed the coherence length, the IVC exhibits current peaks at multiples (harmonics) of the distance ?m between the static Andreev levels eVn=n?m. Moreover, the averaged IVC follows the powerlike behavior rather than the exponential one and has a universal scaling with the junction transparency. This result is qualitatively understood using an analytical approach based on the concept of resonant MAR trajectories. In shorter junctions having lengths comparable to the coherence length, the IVC has an exponential form common for point contacts, however the current structures appear at the subharmonics of the interlevel distance eVn=?m/n rather than the gap subharmonics 2?/n.

Författare

E. V. Bezuglyi

Chalmers, Mikroteknologi och nanovetenskap (MC2)

Institute for Low Temperature Physics and Engineering

E. N. Bratus

Institute for Low Temperature Physics and Engineering

Vitaly Shumeiko

Chalmers, Mikroteknologi och nanovetenskap (MC2), Tillämpad kvantfysik

Physical Review B

24699950 (ISSN) 24699969 (eISSN)

Vol. 95 1 Article no 014522 - 014522

Ämneskategorier

Fysik

DOI

10.1103/PhysRevB.95.014522