Observation of Coulomb blockade in nanostructured epitaxial bilayer graphene on SiC
Artikel i vetenskaplig tidskrift, 2017

We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At low n-type doping close to charge neutrality, electron transport resembles that in exfoliated graphene nanoribbons and is well described by tunnelling of single electrons through a network of Coulomb-blockaded islands. Under the influence of an external magnetic field, Coulomb blockade resonances fluctuate around an average energy and the gap shrinks as a function of magnetic field. At charge neutrality, however, conduction is less insensitive to external magnetic fields. In this regime we also observe a stronger suppression of the conductance below T*, which we interpret as a sign of broken interlayer symmetry or strong fluctuations in the edge/potential disorder.


C. Chua

University of Cambridge

Arseniy Lartsev

Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik

Jinggao Sui

University of Cambridge

V. Panchal

National Physical Laboratory (NPL)

Reuben Puddy

University of Cambridge

Carly Richardson

University of Cambridge

Charles G. Smith

University of Cambridge

Tjbm Janssen

National Physical Laboratory (NPL)

Alexander Tzalenchuk

National Physical Laboratory (NPL)

Royal Holloway University of London

Rositza Yakimova

Linköpings universitet

Sergey Kubatkin

Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik

M. Connolly

University of Cambridge


0008-6223 (ISSN)

Vol. 119 426-430



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