Nonlinear Modeling of FETs for Microwave Switches and Amplifiers
Doktorsavhandling, 2017

The exponential growth in wireless systems require rapid prototyping of radio frequency circuits (RF) using computer-aided design (CAD) enabled models. Most of the RF circuits (e.g. switches, amplifiers, mixers, etc.) use transistors as their active component for a variety of key functions. This thesis deals with application-oriented empirical modeling of high electron mobility transistors (HEMTs) for RF switches and amplifiers. Transistors used in switching and resistive mixer circuits are typically intrinsically symmetrical around the gate. Therefore, a symmetrical small-signal model is proposed, which mirrors the transistor behavior as its source and drain terminals are interchanged. The proposed model allows a significant reduction in the number of measurements required to extract the model parameters with a minimum compromise in accuracy. The proposed small-signal equivalent circuit is extended to create a symmetrical nonlinear transistor model. It is shown that only one current and one charge expression is sufficient to model the overall nonlinear characteristics of a symmetrical transistor. The method is demonstrated first with a GaAs transistor and then extended to a GaN device, where a new symmetrical nonlinear current model is proposed. Transistors also show trapping effects caused by the capture of electrons (and holes) in energy levels within the bandgap. This deviates the high frequency operation of a transistor from its dc-IV characteristics. Therefore, a new model based on Shockley-Read-Hall (SRH) theory is presented to correctly model the trapping effects. The proposed model differentiates the trap potential and how the trapped electrons modulate the current in a transistor. Furthermore, high power transistors often have field-plates to relax peak electric-fields, which influence both the number and distribution of the trapped electrons. Therefore, the proposed model is also used to investigate the effect of field-plates on the trapping, showing an interesting trade-off between the trap potential and modulation of the current by the trapped electrons. The investigation also opens a scope to build a trap model scalable with respect to the field-plate dimensions in GaN HEMTs. In this work, the modeling procedures, although exemplified using GaN and GaAs HEMTs for switches and amplifiers, can be applied equally well for other FET technologies e.g., Si, SiC, GaAs, InP, and other application areas e.g. mixers, oscillators. The work has shown that by incorporating physical information in the modeling, simpler models with improved accuracy can be developed which can reduce time-to-market for new products. HEMT, model, symmetry, trap, GaAs, GaN, nonlinear model, small-signal model, symmetrical model, trap model, field-plate.



small-signal model




nonlinear model

trap model

symmetrical model



Kollektorn, Kemivägen 9
Opponent: Professor Alberto Santarelli, University of Bologna


Ankur Prasad

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Symmetrical Large-Signal Modeling of Microwave Switch FETs

IEEE Transactions on Microwave Theory and Techniques,; Vol. 62(2014)p. 1590-1598

Artikel i vetenskaplig tidskrift

Symmetrical modeling of GaN HEMTS

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC,; (2014)

Paper i proceeding

Symmetry based nonlinear model for GaN HEMTs

10th European Microwave Integrated Circuits Conference (EuMIC), 2015,; (2015)p. 85-88

Paper i proceeding

Symmetry based Nonlinear Model for GaN

2015 10th European Microwave Integrated Circuits Conference (Eumic),; (2015)p. 85-88

Artikel i vetenskaplig tidskrift

Ankur Prasad, Mattias Thorsell, Herbert Zirath, Christian Fager - Accurate Modeling of GaN HEMT RF Behavior Using an Effective Trapping Potential

A. Prasad, M. Thorsell, H. Zirath, and C. Fager - Analyzing The BackGating Effect in GaN HEMTs with Field-Plates Using an Empirical Trap Model


Nanovetenskap och nanoteknik





Doktorsavhandlingar vid Chalmers tekniska högskola. Ny serie: 4329


Chalmers tekniska högskola

Kollektorn, Kemivägen 9

Opponent: Professor Alberto Santarelli, University of Bologna