Transfer-free, lithography-free and fast growth of patterned CVD graphene directly on insulators by using sacrificial metal catalyst
Artikel i vetenskaplig tidskrift, 2018

Chemical vapor deposited graphene suffers from two problems: transfer from metal catalysts to insulators, and photoresist induced degradation during patterning. Both result in macroscopic and microscopic damages such as holes, tears, doping, and contamination, translated into property and yield dropping. We attempt to solve the problems simultaneously. A nickel thin film is evaporated on SiO2 as a sacrificial catalyst, on which surface graphene is grown. A polymer (PMMA) support is spin-coated on the graphene. During the Ni wet etching process, the etchant can permeate the polymer, making the etching efficient. The PMMA/graphene layer is fixed on the substrate by controlling the surface morphology of Ni film during the graphene growth. After etching, the graphene naturally adheres to the insulating substrate. By using this method, transfer-free, lithography-free and fast growth of graphene realized. The whole experiment has good repeatability and controllability. Compared with graphene transfer between substrates, here, no mechanical manipulation is required, leading to minimal damage. Due to the presence of Ni, the graphene quality is intrinsically better than catalyst-free growth. The Ni thickness and growth temperature are controlled to limit the number of layers of graphene. The technology can be extended to grow other two-dimensional materials with other catalysts.

insulating substrate

chemical vapor deposition

lithography-free

transfer-free

graphene

Författare

Yibo Dong

Beijing University of Technology

Yiyang Xie

Beijing University of Technology

Chen Xu

Beijing University of Technology

Yafei Fu

Beijing University of Technology

Xing Fan

Beijing University of Technology

Xuejian Li

Beijing University of Technology

Le Wang

Beijing University of Technology

Fangzhu Xiong

Beijing University of Technology

Weiling Guo

Beijing University of Technology

Guanzhong Pan

Beijing University of Technology

Qiuhua Wang

Beijing University of Technology

Fengsong Qian

Beijing University of Technology

Jie Sun

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Nanotechnology

0957-4484 (ISSN) 1361-6528 (eISSN)

Vol. 29 36 365301

Ämneskategorier

Polymerkemi

Materialkemi

Den kondenserade materiens fysik

DOI

10.1088/1361-6528/aaccce

PubMed

29901454