Feasibility of Room-Temperature GHz-THz Direct Detection in Graphene Through Hot-Carrier Effect
Artikel i vetenskaplig tidskrift, 2018

Recent theories suggest that the photo thermoelectric effect dominates the photo response in graphene. Hot-carrier generation arising from carrier multiplication in graphene under the incident light is introduced as the main cause of this effect. Here, we investigate the possibility of GHz-THz direct detection in a graphene-based device through Hot-carrier effect. The proposed structure is a Schottky junction between graphene and Si. We have measured the optical properties of the junction under 86 GHz and 0.102 THz radiations at room temperature. We have repeated the experiments at cryogenic temperatures down to 150 K. The minimum responsivity of the junction is measured as 2x10(4) V/W under 0.102 THz radiations at room temperature. This value increases five-fold at the cryogenic temperatures. We discuss the physics behind room temperature operation of the device based on the photo thermoelectric effect and the hot-carrier generation in graphene under the illuminations. Room temperature and direct detection of GHz and THz radiation in the graphene-Si junction can be practical evidence of hot-carrier generation in graphene under the incident illuminations.

silicon

Detector

terahertz

graphene

Författare

Mina Amirmazlaghani

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Farshid Raissi

K. N. Toosi University of Technology

IEEE Transactions on Device and Materials Reliability

1530-4388 (ISSN)

Vol. 18 3 429-437

Ämneskategorier

Atom- och molekylfysik och optik

Annan fysik

Den kondenserade materiens fysik

DOI

10.1109/TDMR.2018.2862642

Mer information

Senast uppdaterat

2018-10-10