Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistors with Graphene
Artikel i vetenskaplig tidskrift, 2018

A thermal analysis of AlGaN/GaN high electron mobility transistors (HEMTs) with Graphene is investigated using Silvaco and Finite Element Method. Two thermal management solutions are adopted; first of all, graphene is used as dissipation material between SiC substrate and GaN buffer layer to reduce thermal boundary resistance of the device. At the same time, graphene is also used as a thermal spread material on the top of the source contacts to reduce thermal resistance of the device. The thermal analysis results show that the temperature rise of device adopting graphene decreases by 46.5% in transistors operating at 13.86 W/mm. Meanwhile, the thermal resistance of GaN HEMTs with graphene is 6.8 K/W, which is much lower than the device without graphene, which is 18.5 K/W. The thermal management solutions are useful for integration of large-scale graphene into practical devices for effective heat spreading in AlGaN/GaN HEMT.

AlGaN/GaN

Thermal Management

Graphene

High-Electron-Mobility Transistors (HEMTs)

Författare

Guobin Zhang

Chinese Academy of Sciences

Miao Zhao

Chinese Academy of Sciences

Chunli Yan

Umeå universitet

Bing Sun

Chinese Academy of Sciences

Zonggang Wu

Chinese Academy of Sciences

Hudong Chang

Chinese Academy of Sciences

Zhi Jin

Chinese Academy of Sciences

Jie Sun

Beijing University of Technology

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Honggang Liu

Chinese Academy of Sciences

Journal of Nanoscience and Nanotechnology

1533-4880 (ISSN)

Vol. 18 11 7578-7583

Ämneskategorier

Bearbetnings-, yt- och fogningsteknik

Annan materialteknik

Annan elektroteknik och elektronik

DOI

10.1166/jnn.2018.16080

Mer information

Senast uppdaterat

2018-12-03