Experimental study of a SINIS detector response time at 350 GHz signal frequency
Paper i proceeding, 2018

Response time constant of a SINIS bolometer integrated in an annular ring antenna was measured at a bath temperature of 100 mK. Samples comprising superconducting aluminium electrodes and normal-metal Al/Fe strip connected to electrodes via tunnel junctions were fabricated on oxidized Si substrate using shadow evaporation. The bolometer was illuminated by a fast black-body radiation source through a band-pass filter centered at 350 GHz with a passband of 7 GHz. Radiation source is a thin NiCr film on sapphire substrate. For rectangular 10÷100 μs current pulse the radiation front edge was rather sharp due to low thermal capacitance of NiCr film and low thermal conductivity of substrate at temperatures in the range 1-4 K. The rise time of the response was ∼1-10 μs. This time presumably is limited by technical reasons: high dynamic resistance of series array of bolometers and capacitance of a long twisted pair wiring from SINIS bolometer to a room-Temperature amplifier.

Författare

S. Lemzyakov

Moscow Institute of Physics and Technology

Russian Academy of Sciences

Mikhail Tarasov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

National Research University of Electronic Technology (MIET)

Moscow Institute of Physics and Technology

Russian Academy of Sciences

Sumedh Mahashabde

University of Oxford

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

R. Yusupov

National Research University of Electronic Technology (MIET)

Moscow Institute of Physics and Technology

Leonid Kuzmin

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Valerian S. Edelman

Russian Academy of Sciences

Journal of Physics: Conference Series

17426588 (ISSN) 17426596 (eISSN)

Vol. 969 1 012081

28th International Conference on Low Temperature Physics, LT 2018
Gothenburg, Sweden,

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Rymdstyrelsen, 2016-01-01 -- 2016-12-31.

Ämneskategorier

Oorganisk kemi

Annan elektroteknik och elektronik

Den kondenserade materiens fysik

DOI

10.1088/1742-6596/969/1/012081

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Senast uppdaterat

2019-01-18