Microstructural Characterization of Sulfurization Effects in Cu(In,Ga)Se2 Thin Film Solar Cells
Artikel i vetenskaplig tidskrift, 2019

Surface sulfurization of Cu(In,Ga)Se 2 (CIGSe) absorbers is a commonly applied technique to improve the conversion efficiency of the corresponding solar cells, via increasing the bandgap towards the heterojunction. However, the resulting device performance is understood to be highly dependent on the thermodynamic stability of the chalcogenide structure at the upper region of the absorber. The present investigation provides a high-resolution chemical analysis, using energy dispersive X-ray spectrometry and laser-pulsed atom probe tomography, to determine the sulfur incorporation and chemical re-distribution in the absorber material. The post-sulfurization treatment was performed by exposing the CIGSe surface to elemental sulfur vapor for 20 min at 500°C. Two distinct sulfur-rich phases were found at the surface of the absorber exhibiting a layered structure showing In-rich and Ga-rich zones, respectively. Furthermore, sulfur atoms were found to segregate at the absorber grain boundaries showing concentrations up to ∼7 at% with traces of diffusion outwards into the grain interior.

solar cells

atom probe

thin films

Cu(In,Ga)Se 2

surface treatment

Författare

Hisham Aboulfadl

Jan Keller

Uppsala universitet

Jes Larsen

Uppsala universitet

Mattias Thuvander

Chalmers, Fysik, Materialens mikrostruktur

Lars Riekehr

Uppsala universitet

Marika Edoff

Uppsala universitet

Charlotte Platzer-Björkman

Uppsala universitet

Microscopy and Microanalysis

1431-9276 (ISSN) 1435-8115 (eISSN)

Vol. 25 2 532-538

Ämneskategorier

Oorganisk kemi

Materialkemi

Annan kemi

DOI

10.1017/S1431927619000151

Mer information

Senast uppdaterat

2019-07-21