Transient dielectric functions of Ge, Si, and InP from femtosecond pump-probe ellipsometry
Artikel i vetenskaplig tidskrift, 2019
Transient dielectric functions with a 120 fs time resolution of Ge, Si, and InP were acquired from 1.7 to 3.5eV with a femtosecond pump-probe rotating-compensator ellipsometer. The intensity of the pump laser (with 1.55, 3.10, or 4.65eV photon energy) was adjusted to create an initial near-surface carrier density of 10(20)cm(-3). In Ge, there is a significant (similar to 15%) decrease in the E-1 and E-1+Delta(1) critical point absorption and a Kramers-Kronig consistent change in the refractive index because photoexcited electrons at L block these transitions and reduce their amplitudes. Only a small redshift of the E-1 critical point is observed, which we attribute to lattice heating and exchange-correlation effects. Minimal changes were found for Si and InP, where electrons near Delta and Gamma do not participate in interband transitions between 1.7 and 3.5eV.