Surface structure promoted high-yield growth and magnetotransport properties of Bi2Se3 nanoribbons
Artikel i vetenskaplig tidskrift, 2019

In the present work, a catalyst-free physical vapour deposition method is used to synthesize high yield of Bi2Se3 nanoribbons. By replacing standard glass or quartz substrates with aluminium covered with ultrathin porous anodized aluminium oxide (AAO), the number of synthesized nanoribbons per unit area can be increased by 20-100 times. The mechanisms of formation and yield of the nanoribbons synthesized on AAO substrates having different arrangement and size of pores are analysed and discussed. It is shown that the yield and average length of the nanoribbons can base tuned by adjustment of the synthesis parameters. Analysis of magnetotransport measurements for the individual Bi2Se3 nanoribbons transferred on a Si/SiO2 substrate show the presence of three different populations of charge carriers, originating from the Dirac surface states, bulk carriers and carriers from a trivial 2DEG from an accumulation layer at the Bi2Se3 nanoribbon interface with the substrate.

Författare

[Person 063d7fb4-41eb-4fe2-b70b-10f86f6a9ecb not found]

Latvijas Universitate

[Person be191383-ed4b-41ac-b1fc-497ae2aa785e not found]

Latvijas Universitate

[Person ae3eb23a-a2aa-4d85-a31f-705751b3198b not found]

Latvijas Universitate

[Person 3bbe9b11-2a59-43ef-9503-b1bd92900495 not found]

Latvijas Universitate

[Person ceb5a635-7cfb-4904-ab85-22a5def60467 not found]

Latvijas Universitate

[Person 20cea99a-3072-4b20-805b-e7fa6ebddec1 not found]

Latvijas Universitate

[Person 81694685-214d-41c8-ada1-9ebfda0b9d3d not found]

Université de Montpellier

[Person 4aed0637-71bf-4b4d-afd1-e22ee210ef1d not found]

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

[Person e3d71f5c-4cac-4e2e-a51b-e35d7a49b44b not found]

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

[Person 56f256b5-3cc4-4b1e-8867-60e16c66d1bc not found]

Latvijas Universitate

Scientific Reports

2045-2322 (ISSN)

Vol. 9 1 11328

High Frequency Topological Insulator devices for Metrology (HiTIMe)

Europeiska kommissionen (EU), 2018-02-01 -- 2022-01-31.

Ämneskategorier

Oorganisk kemi

Materialkemi

Organisk kemi

DOI

10.1038/s41598-019-47547-0

PubMed

31383870

Mer information

Senast uppdaterat

2019-10-07