Transfer-free graphene-like thin films on GaN LED epiwafers grown by PECVD using an ultrathin Pt catalyst for transparent electrode applications
Artikel i vetenskaplig tidskrift, 2019

In this work, we grew transfer-free graphene-like thin films (GLTFs) directly on gallium nitride (GaN)/sapphire light-emitting diode (LED) substrates. Their electrical, optical and thermal properties were studied for transparent electrode applications. Ultrathin platinum (2 nm) was used as the catalyst in the plasma-enhanced chemical vapor deposition (PECVD). The growth parameters were adjusted such that the high temperature exposure of GaN wafers was reduced to its minimum (deposition temperature as low as 600 °C) to ensure the intactness of GaN epilayers. In a comparison study of the Pt-GLTF GaN LED devices and Pt-only LED devices, the former was found to be superior in most aspects, including surface sheet resistance, power consumption, and temperature distribution, but not in optical transmission. This confirmed that the as-developed GLTF-based transparent electrodes had good current spreading, current injection and thermal spreading functionalities. Most importantly, the technique presented herein does not involve any material transfer, rendering a scalable, controllable, reproducible and semiconductor industry-compatible solution for transparent electrodes in GaN-based optoelectronic devices.

Heat spreading

Gallium nitride

LEDs

Transparent electrodes

Graphene

PECVD

Transfer-free

Författare

Fangzhu Xiong

Beijing University of Technology

W. L. Guo

Beijing University of Technology

Shiwei Feng

Beijing University of Technology

Xuan Li

Beijing University of Technology

Zaifa Du

Beijing University of Technology

Le Wang

Beijing University of Technology

J. Deng

Beijing University of Technology

Jie Sun

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Beijing University of Technology

Materials

1996-1944 (ISSN)

Vol. 12 21 1-12

Ämneskategorier

Bearbetnings-, yt- och fogningsteknik

Annan materialteknik

Den kondenserade materiens fysik

DOI

10.3390/ma12213533

Mer information

Senast uppdaterat

2019-11-26