A 10.8-GHz GaN MMIC Load-Modulated Amplifier
Paper i proceeding, 2019

This work presents a 10.8-GHz load-modulated MMIC power amplifier designed in the 0.25 μm GaN-on-SiC Cree Wolfspeed process. The carrier amplifier has a single stage and is biased in class-AB, while the peaking path is designed as a two-stage amplifier. The output power at saturation is 35.5 dBm with 7.6 dB of gain and PAE of 38%. At 7-dB output power backoff, the PAE remains above 26%. The combiner network is synthesised with a black-box method constrained to exhibit Doherty amplifier behaviour. The disagreement between measurements and simulations is explained in part through an analysis of the interstage matching network using scattering parameters renormalised to complex terminations.

Gallium Nitride

load modulation

Doherty

power amplifier

Monolithic Microwave Integrated Circuit (MMIC)

Författare

Allison Duh

University of Colorado at Boulder

Maxwell Duffy

University of Colorado at Boulder

William Hallberg

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik

Mauricio Pinto

University of Colorado at Boulder

Taylor Barton

University of Colorado at Boulder

Zoya Popovic

University of Colorado at Boulder

2019 49th European Microwave Conference, EuMC 2019

408-411 8910923

49th European Microwave Conference, EuMC 2019
Paris, France,

Ämneskategorier

Telekommunikation

Kommunikationssystem

Annan elektroteknik och elektronik

DOI

10.23919/EuMC.2019.8910923

Mer information

Senast uppdaterat

2020-06-02