Production and processing of graphene and related materials
Artikel i vetenskaplig tidskrift, 2020
We present an overview of the main techniques for production and processing of graphene and related materials (GRMs), as well as the key characterization procedures. We adopt a 'hands-on' approach, providing practical details and procedures as derived from literature as well as from the authors' experience, in order to enable the reader to reproduce the results. Section I is devoted to 'bottom up' approaches, whereby individual constituents are pieced together into more complex structures. We consider graphene nanoribbons (GNRs) produced either by solution processing or by on-surface synthesis in ultra high vacuum (UHV), as well carbon nanomembranes (CNM). Production of a variety of GNRs with tailored band gaps and edge shapes is now possible. CNMs can be tuned in terms of porosity, crystallinity and electronic behaviour. Section II covers 'top down' techniques. These rely on breaking down of a layered precursor, in the graphene case usually natural crystals like graphite or artificially synthesized materials, such as highly oriented pyrolythic graphite, monolayers or few layers (FL) flakes. The main focus of this section is on various exfoliation techniques in a liquid media, either intercalation or liquid phase exfoliation (LPE). The choice of precursor, exfoliation method, medium as well as the control of parameters such as time or temperature are crucial. A definite choice of parameters and conditions yields a particular material with specific properties that makes it more suitable for a targeted application. We cover protocols for the graphitic precursors to graphene oxide (GO). This is an important material for a range of applications in biomedicine, energy storage, nanocomposites, etc. Hummers' and modified Hummers' methods are used to make GO that subsequently can be reduced to obtain reduced graphene oxide (RGO) with a variety of strategies. GO flakes are also employed to prepare three-dimensional (3d) low density structures, such as sponges, foams, hydro- or aerogels. The assembly of flakes into 3d structures can provide improved mechanical properties. Aerogels with a highly open structure, with interconnected hierarchical pores, can enhance the accessibility to the whole surface area, as relevant for a number of applications, such as energy storage. The main recipes to yield graphite intercalation compounds (GICs) are also discussed. GICs are suitable precursors for covalent functionalization of graphene, but can also be used for the synthesis of uncharged graphene in solution. Degradation of the molecules intercalated in GICs can be triggered by high temperature treatment or microwave irradiation, creating a gas pressure surge in graphite and exfoliation. Electrochemical exfoliation by applying a voltage in an electrolyte to a graphite electrode can be tuned by varying precursors, electrolytes and potential. Graphite electrodes can be either negatively or positively intercalated to obtain GICs that are subsequently exfoliated. We also discuss the materials that can be amenable to exfoliation, by employing a theoretical data-mining approach. The exfoliation of LMs usually results in a heterogeneous dispersion of flakes with different lateral size and thickness. This is a critical bottleneck for applications, and hinders the full exploitation of GRMs produced by solution processing. The establishment of procedures to control the morphological properties of exfoliated GRMs, which also need to be industrially scalable, is one of the key needs. Section III deals with the processing of flakes. (Ultra)centrifugation techniques have thus far been the most investigated to sort GRMs following ultrasonication, shear mixing, ball milling, microfluidization, and wet-jet milling. It allows sorting by size and thickness. Inks formulated from GRM dispersions can be printed using a number of processes, from inkjet to screen printing. Each technique has specific rheological requirements, as well as geometrical constraints. The solvent choice is critical, not only for the GRM stability, but also in terms of optimizing printing on different substrates, such as glass, Si, plastic, paper, etc, all with different surface energies. Chemical modifications of such substrates is also a key step. Sections IV-VII are devoted to the growth of GRMs on various substrates and their processing after growth to place them on the surface of choice for specific applications. The substrate for graphene growth is a key determinant of the nature and quality of the resultant film. The lattice mismatch between graphene and substrate influences the resulting crystallinity. Growth on insulators, such as SiO2, typically results in films with small crystallites, whereas growth on the close-packed surfaces of metals yields highly crystalline films. Section IV outlines the growth of graphene on SiC substrates. This satisfies the requirements for electronic applications, with well-defined graphene-substrate interface, low trapped impurities and no need for transfer. It also allows graphene structures and devices to be measured directly on the growth substrate. The flatness of the substrate results in graphene with minimal strain and ripples on large areas, allowing spectroscopies and surface science to be performed. We also discuss the surface engineering by intercalation of the resulting graphene, its integration with Si-wafers and the production of nanostructures with the desired shape, with no need for patterning. Section V deals with chemical vapour deposition (CVD) onto various transition metals and on insulators. Growth on Ni results in graphitized polycrystalline films. While the thickness of these films can be optimized by controlling the deposition parameters, such as the type of hydrocarbon precursor and temperature, it is difficult to attain single layer graphene (SLG) across large areas, owing to the simultaneous nucleation/growth and solution/precipitation mechanisms. The differing characteristics of polycrystalline Ni films facilitate the growth of graphitic layers at different rates, resulting in regions with differing numbers of graphitic layers. High-quality films can be grown on Cu. Cu is available in a variety of shapes and forms, such as foils, bulks, foams, thin films on other materials and powders, making it attractive for industrial production of large area graphene films. The push to use CVD graphene in applications has also triggered a research line for the direct growth on insulators. The quality of the resulting films is lower than possible to date on metals, but enough, in terms of transmittance and resistivity, for many applications as described in section V. Transfer technologies are the focus of section VI. CVD synthesis of graphene on metals and bottom up molecular approaches require SLG to be transferred to the final target substrates. To have technological impact, the advances in production of high-quality large-area CVD graphene must be commensurate with those on transfer and placement on the final substrates. This is a prerequisite for most applications, such as touch panels, anticorrosion coatings, transparent electrodes and gas sensors etc. New strategies have improved the transferred graphene quality, making CVD graphene a feasible option for CMOS foundries. Methods based on complete etching of the metal substrate in suitable etchants, typically iron chloride, ammonium persulfate, or hydrogen chloride although reliable, are time- and resource-consuming, with damage to graphene and production of metal and etchant residues. Electrochemical delamination in a low-concentration aqueous solution is an alternative. In this case metallic substrates can be reused. Dry transfer is less detrimental for the SLG quality, enabling a deterministic transfer. There is a large range of layered materials (LMs) beyond graphite. Only few of them have been already exfoliated and fully characterized. Section VII deals with the growth of some of these materials. Amongst them, h-BN, transition metal tri- and di-chalcogenides are of paramount importance. The growth of h-BN is at present considered essential for the development of graphene in (opto) electronic applications, as h-BN is ideal as capping layer or substrate. The interesting optical and electronic properties of TMDs also require the development of scalable methods for their production. Large scale growth using chemical/physical vapour deposition or thermal assisted conversion has been thus far limited to a small set, such as h-BN or some TMDs. Heterostructures could also be directly grown. Section VIII discusses advances in GRM functionalization. A broad range of organic molecules can be anchored to the sp(2) basal plane by reductive functionalization. Negatively charged graphene can be prepared in liquid phase (e.g. via intercalation chemistry or electrochemically) and can react with electrophiles. This can be achieved both in dispersion or on substrate. The functional groups of GO can be further derivatized. Graphene can also be noncovalently functionalized, in particular with polycyclic aromatic hydrocarbons that assemble on the sp(2) carbon network by pi-pi stacking. In the liquid phase, this can enhance the colloidal stability of SLG/FLG. Approaches to achieve noncovalent on-substrate functionalization are also discussed, which can chemically dope graphene. Research efforts to derivatize CNMs are also summarized, as well as novel routes to selectively address defect sites. In dispersion, edges are the most dominant defects and can be covalently modified. This enhances colloidal stability without modifying the graphene basal plane. Basal plane point defects can also be modified, passivated and healed in ultra-high vacuum. The decoration of graphene with metal nanoparticles (NPs) has also received considerable attention, as it allows to exploit synergistic effects between NPs and graphene. Decoration can be either achieved chemically or in the gas phase. All LMs, can be functionalized and we summarize emerging approaches to covalently and noncovalently functionalize MoS2 both in the liquid and on substrate. Section IX describes some of the most popular characterization techniques, ranging from optical detection to the measurement of the electronic structure. Microscopies play an important role, although macroscopic techniques are also used for the measurement of the properties of these materials and their devices. Raman spectroscopy is paramount for GRMs, while PL is more adequate for non-graphene LMs (see section IX.2). Liquid based methods result in flakes with different thicknesses and dimensions. The qualification of size and thickness can be achieved using imaging techniques, like scanning probe microscopy (SPM) or transmission electron microscopy (TEM) or spectroscopic techniques. Optical microscopy enables the detection of flakes on suitable surfaces as well as the measurement of optical properties. Characterization of exfoliated materials is essential to improve the GRM metrology for applications and quality control. For grown GRMs, SPM can be used to probe morphological properties, as well as to study growth mechanisms and quality of transfer. More generally, SPM combined with smart measurement protocols in various modes allows one to get obtain information on mechanical properties, surface potential, work functions, electrical properties, or effectiveness of functionalization. Some of the techniques described are suitable for 'in situ' characterization, and can be hosted within the growth chambers. If the diagnosis is made 'ex situ', consideration should be given to the preparation of the samples to avoid contamination. Occasionally cleaning methods have to be used prior to measurement.
synthesis of graphene and related materials
characterization of layered materials
inks of layered materials
functionalization of layered materials
processing of layered materials
growth of layered materials
Författare
[Person b75fc359-381a-4cfa-b5b7-3e7fe8f44ad3 not found]
Trinity College Dublin
Universität Heidelberg
[Person c2d8dd5a-52f3-454e-b745-1dcd9cdc7086 not found]
University of Cambridge
[Person 866b6b9f-4a90-4318-ad0f-e3147b514ce4 not found]
Universidad Autonoma de Madrid (UAM)
[Person 3a342139-9089-4a5a-bc21-c4655525f5ab not found]
Université Paris-Saclay
[Person 2f58dc33-f984-45a5-9c4a-3ec63deb45cb not found]
Universidad de Zaragoza
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[Person 2de96188-8c43-463d-af22-ffd43abaed08 not found]
Consejo Superior de Investigaciones Científicas (CSIC)
[Person 39d5b230-97e3-4627-a303-222f4aa333ae not found]
University of Nottingham
[Person 83d7ddd0-5fae-4295-9eac-af4b462de851 not found]
RWTH Aachen University
[Person 5be3ef63-284e-49b7-8ce7-13d4e1692e22 not found]
Université Paris-Saclay
[Person 2e2ee4bf-e7cb-4078-b5ca-6495f71c8164 not found]
Fondazione Bruno Kessler (FBK)
[Person d1d86501-2d95-4912-b947-f555e83f0fe9 not found]
Istituto Italiano di Tecnologia
[Person cee3fb3c-1b93-43e7-bbaa-10ca9bc30c0e not found]
Georgia Institute of Technology
Université Grenoble Alpes
[Person 33562ccc-e624-414c-bccb-6dc8361117c9 not found]
Technische Universität Dresden
[Person 327b38e3-e9b0-4b65-9ed1-19dce31d9b91 not found]
Politecnico di Torino
[Person 74c5ca32-22f0-4727-addf-8c6500559dfe not found]
Universität Zürich
[Person 03cfa988-b522-46d2-a7ae-3047d8438868 not found]
University of Nottingham
[Person 1dd5ce3a-a9e9-4c56-937f-0a9e10c3958c not found]
Universität Bielefeld
[Person 818512f4-327a-45ff-9335-75e255509960 not found]
Université de Strasbourg
[Person af0e33d0-6891-427c-a4d1-7853131d2702 not found]
Danmarks Tekniske Universitet (DTU)
[Person ae80c944-4d69-497c-a9cd-4877c8ee87fb not found]
Istituto Italiano di Tecnologia
BeDimensional
[Person c1d2fd83-31d0-42d4-9c81-3355140a3c81 not found]
Eidgenössische Materialprüfungs- und Forschungsanstalt (Empa)
[Person 23105981-c81b-44e3-a0e5-456754f88929 not found]
CIC EnergiGUNE
[Person 710db32d-5f3e-4000-a074-0dc57db4842d not found]
Consejo Superior de Investigaciones Científicas (CSIC)
[Person 3d345204-bc32-4c62-9fc6-88da9f9f81d6 not found]
CIC EnergiGUNE
Basque Foundation for Science (Ikerbasque)
[Person bf263449-a15f-433a-a3f8-13bbbd6ae5ed not found]
Consejo Superior de Investigaciones Científicas (CSIC)
[Person 579cf679-8c64-4825-91c6-b3f61d6481c9 not found]
Consiglio Nazionale delle Ricerche (CNR)
[Person 36541c19-aad7-4629-8e87-1ca48ba75f04 not found]
Université de Strasbourg
[Person 548b6727-438f-46a1-811d-e5b133bea018 not found]
Lukasiewicz Research Network - Institute of Microelectronics and Photonics (LUKASIEWICZ-IMIF)
[Person 389fef07-c7b3-4577-b0d4-75926ab8dadb not found]
University of Bath
[Person 3454882d-ec07-4b8e-90f0-30e350e1700e not found]
Trinity College Dublin
[Person e7f360cd-be8a-4855-9fb0-efc4070e66ab not found]
Istituto Italiano di Tecnologia
[Person 64a6bf86-d6ff-44d4-9974-5b78ac90e56f not found]
Fondazione Bruno Kessler (FBK)
[Person 00e4907f-a366-4424-9830-2f9b348dd44d not found]
Universität Zürich
[Person 484c9916-f7d4-48cc-8651-7e6c190daad9 not found]
Friedrich-Alexander-Universität Erlangen Nurnberg (FAU)
[Person f8ce1f9f-53e9-4b71-93e3-4f7b6af157a5 not found]
University of Cambridge
[Person 3771297d-6233-42df-80ba-bfec56358834 not found]
CIC EnergiGUNE
[Person db4b1705-4d8c-4f90-9e6a-fb06cb52195b not found]
Technische Universität München
[Person d8a4a502-dddb-45e3-8abd-ee0185c87313 not found]
Universität Der Bundeswehr München
[Person 70f6442e-2afd-42ee-8b5f-f1af0e5ff20d not found]
Eidgenössische Materialprüfungs- und Forschungsanstalt (Empa)
Universität Bern
[Person b01285e9-bca9-4a34-ae8f-3b2011f96530 not found]
Technische Universität Dresden
[Person 0c08a952-3bfc-430c-81fd-3c31804bf23d not found]
Politecnico di Torino
[Person 9c55cb95-e983-4a40-afe5-060e979ab05d not found]
Istituto Italiano di Tecnologia
[Person 819287b2-fb98-49be-b311-0cded1974a72 not found]
Idryma Technologias kai Erevnas (FORTH)
Panepistimion Patron
[Person 86c6fe8b-bd5b-4104-bce5-0e225c26ac7b not found]
European Centre for Theoretical Studies in Nuclear Physics and Related Areas
Istituto Nazionale di Fisica Nucleare
[Person 3a75326f-2ee1-4b35-a0ee-2cf42500841e not found]
Consejo Superior de Investigaciones Científicas (CSIC)
[Person 0e6aae8c-026a-4a84-b94d-85f57d162927 not found]
Fundacio Institut Catala de Nanociencia i Nanotecnologia (ICN2)
[Person cbaa0a91-f8d2-442f-a4a5-000a37d66df1 not found]
Ecole Polytechnique Federale de Lausanne (EPFL)
[Person 18fb1dc7-693d-4f87-a71e-3c86faeb7775 not found]
Universität Bielefeld
[Person 40279e18-5714-43ff-8d5a-d4788f4bf2b1 not found]
Avanzare Innovacion Tecnologica Sl
[Person b34f27d9-ee2e-43f4-8ba2-f7312ee0164d not found]
Universität Zürich
[Person e8bbc7f9-986f-4b58-9d43-0f56b684943f not found]
Friedrich-Alexander-Universität Erlangen Nurnberg (FAU)
[Person 9ca86029-726e-4453-ac0a-d88298c35b65 not found]
Universität Zürich
[Person fbe9972a-cf7d-4c59-8474-71c62e1d93f8 not found]
Consejo Superior de Investigaciones Científicas (CSIC)
[Person 8d0fa398-a72c-4c15-b65d-651454c27281 not found]
Friedrich-Alexander-Universität Erlangen Nurnberg (FAU)
[Person 7f3b792b-1909-4964-84bc-7b5dbdf62a58 not found]
University of Cambridge
[Person f26ad9db-9193-4822-ba50-68b4bdfd000d not found]
Consejo Superior de Investigaciones Científicas (CSIC)
[Person cf2b9162-0119-4813-baf8-8f64bc71d14e not found]
Danmarks Tekniske Universitet (DTU)
[Person 7016515f-22f8-4ba4-8225-d68227234ed2 not found]
Consejo Superior de Investigaciones Científicas (CSIC)
[Person e3edfb84-93dd-4ebf-a5d7-436ab89c41cb not found]
Universität Ulm
[Person f3c560b3-08ac-404e-a133-1711fa93a4eb not found]
Itä-Suomen Yliopisto
[Person 3a31628d-b79a-452d-b9a5-ed20e48d0b5e not found]
Ecole Polytechnique Federale de Lausanne (EPFL)
[Person f9c8619d-6985-48e8-af41-ff6667f4393e not found]
Ecole Polytechnique Federale de Lausanne (EPFL)
[Person fa88494c-ce07-48cb-8f38-40501e577027 not found]
Idryma Technologias kai Erevnas (FORTH)
Aristotelio Panepistimio Thessalonikis
[Person e1cf814a-a38a-4f64-9b91-3d334af9f03d not found]
University of Manchester
Consorzio Nazionale Interuniversitario per le Telecomunicazioni (CNIT)
[Person f99bd8ac-1ac2-4b67-8b4e-a8ec96cb7fa2 not found]
Lukasiewicz Research Network - Institute of Microelectronics and Photonics (LUKASIEWICZ-IMIF)
Polish Academy of Sciences
[Person e1e8b333-49d3-49f4-80b7-8e3d7c47462d not found]
Universität Der Bundeswehr München
[Person 53a15724-a68e-4d58-b43c-565db435fe21 not found]
Aalto-Yliopisto
[Person 8b91d2ea-57a1-4e6e-9353-68a274926834 not found]
Aalto-Yliopisto
[Person 83b04128-997e-4542-921c-86ae986cab0f not found]
Consiglio Nazionale delle Ricerche (CNR)
[Person 2980b27c-5244-48d4-8efa-8d2356115295 not found]
Technische Universität Dresden
[Person 416fe7de-2449-474b-8780-5e1ea47b07b7 not found]
Université Paris-Saclay
[Person 59443805-c734-4221-a830-86c2fe07a48b not found]
University of Cambridge
[Person 522fa2ba-21ee-41ab-914e-19fb191ea5e9 not found]
Consejo Superior de Investigaciones Científicas (CSIC)
[Person 680275ec-f566-40fa-964c-edbefc449807 not found]
Friedrich-Alexander-Universität Erlangen Nurnberg (FAU)
[Person da615d5d-90b5-470d-bd8e-0cd0c90418c4 not found]
Universidad de Castilla, La Mancha
[Person bb58b85a-2840-4185-996b-d6fac03cf18a not found]
Consejo Superior de Investigaciones Científicas (CSIC)
[Person ae7e8406-6b0b-4a78-a212-8a5fff26fc49 not found]
Consejo Superior de Investigaciones Científicas (CSIC)
[Person 4ab56b57-dbb1-4d1e-9783-31784861812c not found]
Consejo Superior de Investigaciones Científicas (CSIC)
[Person adbc253a-462f-4d77-bb4d-c115034873cc not found]
Ecole Polytechnique Federale de Lausanne (EPFL)
[Person 6a696a38-5d4c-42ad-8e2a-61f568041e79 not found]
ShanghaiTech University
Universidad de Zaragoza
[Person 498cfc37-7bba-498a-bbe4-24649d3e23a3 not found]
Trinity College Dublin
[Person 4e37fa84-d287-4b89-9bb6-6bb9d722f109 not found]
Consiglio Nazionale delle Ricerche (CNR)
[Person 4cc2f1b2-2003-4d80-86cf-274704b57b43 not found]
Consejo Superior de Investigaciones Científicas (CSIC)
[Person 6d97a8d4-231a-42b5-bd51-be8202e98c20 not found]
Grupo Antolin
[Person 7b58c2a2-fabb-4d17-b69c-410909e047f0 not found]
Consejo Superior de Investigaciones Científicas (CSIC)
[Person 363535a1-7887-429d-a663-61a9ae59d512 not found]
Friedrich-Alexander-Universität Erlangen Nurnberg (FAU)
[Person 981c38fb-e18b-4a01-b729-db5be1797e05 not found]
Universität Zürich
[Person 939c2a34-134d-4438-b788-6a25b00128e3 not found]
Istituto Italiano di Tecnologia
[Person ec049888-e95d-4150-b544-6411f62c7f7d not found]
Istituto Italiano di Tecnologia
[Person 41d713ed-1f07-4b3a-9989-66670981cfeb not found]
Consiglio Nazionale delle Ricerche (CNR)
[Person 25d50ce6-51ca-4289-b9de-9b79397d296b not found]
Consejo Superior de Investigaciones Científicas (CSIC)
[Person f0b049c7-2af2-49d9-b37b-b717bc26dfda not found]
Consejo Superior de Investigaciones Científicas (CSIC)
[Person 98cacf64-dedf-4bc4-af3b-74078b0f5626 not found]
Trinity College Dublin
[Person 4b8920d0-941c-4b83-b3e9-e1510c61e1b5 not found]
Consiglio Nazionale delle Ricerche (CNR)
[Person 071658b1-395f-485e-99dd-c5cbb1be892f not found]
University of Cambridge
University of Exeter
[Person fcabb04e-c0b3-473e-9859-f3dd472d287a not found]
Consejo Superior de Investigaciones Científicas (CSIC)
[Person 51954037-f460-4c38-9726-dc47578e9d8c not found]
Consiglio Nazionale delle Ricerche (CNR)
Chalmers, Industri- och materialvetenskap, Material och tillverkning
[Person 69a0a120-26b8-4aa9-a872-10b336398ee8 not found]
Idryma Technologias kai Erevnas (FORTH)
[Person 2573bbc5-fe9e-4d4d-a89e-4d452518ce43 not found]
Politechnika Warszawska
Lukasiewicz Research Network - Institute of Microelectronics and Photonics (LUKASIEWICZ-IMIF)
[Person 06aff163-84f3-4618-8907-1253cffabfde not found]
University of Nottingham
[Person 77959df1-3e88-48e5-b811-f2e8dc7359b3 not found]
Universita degli Studi di Trieste
Basque Foundation for Science (Ikerbasque)
Centro de Investigación Cooperativa en Biomateriales CIC biomaGUNE
[Person 89a7a056-bf5e-4d3b-8980-12f318ff6986 not found]
Université Paris-Saclay
[Person b62f48d1-35c2-40d6-b027-abadc1927b5f not found]
Université Grenoble Alpes
[Person e45c358b-42e0-4418-bc4f-426b58cdd0d3 not found]
Fondazione Edoardo Amaldi
Queen Mary University of London
Universita degli Studi di Trento
[Person ff3ea784-76c3-4a9a-8b18-525852ce527d not found]
Universidad del Pais Vasco / Euskal Herriko Unibertsitatea
CIC EnergiGUNE
[Person 11d4ac9d-427f-4082-82a2-0257157b152c not found]
Istituto Italiano di Tecnologia
[Person 97f62550-1f35-41ee-972a-52c48f4adf80 not found]
Eidgenössische Materialprüfungs- und Forschungsanstalt (Empa)
[Person 492634a7-51f2-47ee-a711-d84e84c11a6c not found]
Université de Strasbourg
[Person 4cca1656-0e00-4586-816f-5d35b1853d03 not found]
Université Paris-Saclay
[Person 0969f32d-af51-49f3-b938-bbe26507ff77 not found]
Fondazione Bruno Kessler (FBK)
[Person 06da8e98-e2b0-45c2-a188-6f149df29b20 not found]
Technische Universität Chemnitz
[Person e2b406be-8f64-4ead-8f7b-89ef65f44bfe not found]
Fondazione Bruno Kessler (FBK)
[Person 17c9bedc-9c57-468d-bfd9-a75d34528fca not found]
RWTH Aachen University
[Person 4a230a90-e8bd-4fee-8495-c56d7a5aa95c not found]
Université Paris-Saclay
[Person f96416e0-22d4-4ff0-ab04-54c3df39d28e not found]
Politechnika Warszawska
Lukasiewicz Research Network - Institute of Microelectronics and Photonics (LUKASIEWICZ-IMIF)
[Person c5795e40-7e25-42c9-bca7-059bbeae8a18 not found]
Itä-Suomen Yliopisto
[Person 188aa466-9adc-4c6b-91f3-4d2b17b52454 not found]
European Centre for Theoretical Studies in Nuclear Physics and Related Areas
Univerzita Karlova
Istituto Nazionale di Fisica Nucleare
[Person a54a739c-0624-4a3c-88a1-b8fc2414ab85 not found]
Aixtron
[Person 6ffa1381-cb14-46b5-9984-8efdd7454fd2 not found]
Fondazione Bruno Kessler (FBK)
[Person 352a8b05-edba-4409-bc22-a58cc0bb78e0 not found]
University of Cambridge
[Person 19ee1519-9afd-4f33-9c53-f8ce61ff1572 not found]
Politecnico di Torino
[Person 1eccf255-178c-43f2-96c9-3f174fe7bb54 not found]
Consiglio Nazionale delle Ricerche (CNR)
[Person f4462454-d02a-4b62-bda5-4880f643b6f4 not found]
Friedrich-Schiller-Universität Jena
[Person 4c6f1645-b1a3-442d-8a24-3bed66c597ee not found]
Universidad de Castilla, La Mancha
[Person 0f53b9d0-c29d-434f-8b1d-c326f6663ac2 not found]
InterQuimica
[Person 0440e91c-05fe-4e23-ad8d-358bb8f5f702 not found]
Danmarks Tekniske Universitet (DTU)
[Person b441785f-a9c0-47ff-b3ca-a16c44c8575d not found]
Consiglio Nazionale delle Ricerche (CNR)
Chalmers, Industri- och materialvetenskap, Material och tillverkning
[Person 8679a68b-7369-4523-a020-505018120659 not found]
Linköpings universitet
[Person 1e5691a7-6e85-4f5c-b3e7-ccb5af3884c4 not found]
Technische Universität Dresden
[Person 2aa475c8-4e7f-444b-9b26-15d86cb94953 not found]
Linköpings universitet
[Person 5a3849ea-21d4-47e4-a108-e53986ac48e1 not found]
Universität Der Bundeswehr München
[Person 898e6d0f-66d7-4c02-9e9d-43270083371c not found]
University of Cambridge
[Person 99936111-9ef7-4ad8-8b3a-80d807e1b8b2 not found]
Universität Bielefeld
[Person ce69dfbc-55d1-41e9-a2e1-71dc965d419f not found]
Technische Universität Dresden
[Person b0fae371-9a48-4b25-9399-8751e2e287f8 not found]
University of Texas at Dallas
[Person 1b82b74d-c640-4b33-beab-06a0ac1133c4 not found]
University of Cambridge
[Person ea83c6a3-6543-41dc-b00d-3f46505524c2 not found]
Consejo Superior de Investigaciones Científicas (CSIC)
2D Materials
2053-1583 (eISSN)
Vol. 7 2 022001Ämneskategorier (SSIF 2011)
Materialteknik
Materialkemi
Den kondenserade materiens fysik
DOI
10.1088/2053-1583/ab1e0a