Thin-film flip-chip UVB LEDs realized by electrochemical etching
Artikel i vetenskaplig tidskrift, 2020

We demonstrate a thin-film flip-chip (TFFC) light-emitting diode (LED) emitting in the ultraviolet B (UVB) at 311 nm, where substrate removal has been achieved by electrochemical etching of a sacrificial Al0.37Ga0.63N layer. The electroluminescence spectrum of the TFFC LED corresponds well to the as-grown LED structure, showing no sign of degradation of structural and optical properties by electrochemical etching. This is achieved by a proper epitaxial design of the sacrificial layer and the etch stop layers in relation to the LED structure and the electrochemical etch conditions. Enabling a TFFC UV LED is an important step toward improving the light extraction efficiency that limits the power conversion efficiency in AlGaN-based LEDs.

Thin-film

Light-emitting diode

UVB

Electrochemical etching

Författare

Michael Alexander Bergmann

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Johannes Enslin

Technische Universität Berlin

Filip Hjort

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Tim Wernicke

Technische Universität Berlin

Michael Kneissl

Technische Universität Berlin

Åsa Haglund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 116 12 121101-

Styrkeområden

Nanovetenskap och nanoteknik (2010-2017)

Ämneskategorier

Annan fysik

Nanoteknik

Den kondenserade materiens fysik

Infrastruktur

Chalmers materialanalyslaboratorium

Nanotekniklaboratoriet

DOI

10.1063/1.5143297

Mer information

Senast uppdaterat

2020-04-22