Molecular Doping of Epigraphene for Device Applications
Doktorsavhandling, 2020
Epitaxial graphene grown on silicon carbide, or epigraphene, offers in principle a suitable platform for electronic applications of graphene which require scalable, reproducible, and high-quality material. However, one of the main drawbacks of epigraphene lies in the difficulty in controlling its carrier density, which hinders its usefulness in future applications.
To solve this problem, this thesis introduces a novel molecular doping method which utilizes acceptor molecules mixed with a polymer. This combination results in a dopant blend that is simple to apply onto epigraphene, and capable of providing controllable, potent, and homogeneous doping over large areas. This technique opens many different avenues for potential applications, three of which are explored in this work.
The doping method was successfully used to create practical graphene quantum resistance standards, based on the quantum Hall effect. It was confirmed by two independent metrology institutes that epigraphene meets the stringent criteria for use in precision measurements of resistance.
Doped epigraphene was also used to develop magnetic field sensors. These Hall sensors were shown to rival and even surpass the best graphene-based Hall sensors reported in literature thus far, including record-low magnetic field detection limits at room temperature. These Hall sensors also demonstrated promising performance at high temperatures, with the potential to one day outmatch industrial sensors in the automotive and military temperature ranges.
Lastly, doped epigraphene was used to create a proof-of-concept terahertz detector. The devices demonstrated highly sensitive and wide-band coherent detection of terahertz signals, with record-low power consumption requirements. It was found that an optimized device could potentially allow for the creation of detector arrays that can provide quantum limited detection across the entire terahertz range, and revolutionize sensors used in next-generation space telescopes.
To solve this problem, this thesis introduces a novel molecular doping method which utilizes acceptor molecules mixed with a polymer. This combination results in a dopant blend that is simple to apply onto epigraphene, and capable of providing controllable, potent, and homogeneous doping over large areas. This technique opens many different avenues for potential applications, three of which are explored in this work.
The doping method was successfully used to create practical graphene quantum resistance standards, based on the quantum Hall effect. It was confirmed by two independent metrology institutes that epigraphene meets the stringent criteria for use in precision measurements of resistance.
Doped epigraphene was also used to develop magnetic field sensors. These Hall sensors were shown to rival and even surpass the best graphene-based Hall sensors reported in literature thus far, including record-low magnetic field detection limits at room temperature. These Hall sensors also demonstrated promising performance at high temperatures, with the potential to one day outmatch industrial sensors in the automotive and military temperature ranges.
Lastly, doped epigraphene was used to create a proof-of-concept terahertz detector. The devices demonstrated highly sensitive and wide-band coherent detection of terahertz signals, with record-low power consumption requirements. It was found that an optimized device could potentially allow for the creation of detector arrays that can provide quantum limited detection across the entire terahertz range, and revolutionize sensors used in next-generation space telescopes.
Metrology
epitaxial graphene
THz
Graphene
Molecular Doping
Hall Effect
Kollektorn, Kemivägen 9
Opponent: Prof. Sophie Guéron, Laboratoire de Physique des Solides Orsay, Université Paris Sud, France
Författare
Hans He
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Operation of graphene quantum Hall resistance standard in a cryogen-free table-top system
2D Materials,;Vol. 2(2015)p. Art. no. 035015-
Artikel i vetenskaplig tidskrift
Fabrication of graphene quantum hall resistance standard in a cryogen-Table-Top system
2016 Conference on Precision Electromagnetic Measurements, CPEM 2016; The Westin OttawaOttawa; Canada; 10-15 July 2016,;(2016)p. Art no 7540516-
Paper i proceeding
Uniform doping of graphene close to the Dirac point by polymer-assisted assembly of molecular dopants
Nature Communications,;Vol. 9(2018)
Artikel i vetenskaplig tidskrift
Polymer-encapsulated molecular doped epigraphene for quantum resistance metrology
Metrologia,;Vol. 56(2019)
Artikel i vetenskaplig tidskrift
The performance limits of epigraphene Hall sensors doped across the Dirac point
Applied Physics Letters,;Vol. 116(2020)
Artikel i vetenskaplig tidskrift
Towards quantum-limited coherent detection of terahertz waves in charge-neutral graphene
Nature Astronomy,;Vol. 3(2019)p. 983-988
Övrig text i vetenskaplig tidskrift
Epitaxial graphene grown on silicon carbide, or epigraphene, offers in principle a suitable platform for electronic applications of graphene which require scalable, reproducible, and high-quality material. However, one of the main drawbacks of epigraphene lies in the difficulty in controlling its carrier density, which hinders its usefulness in future applications.
To solve this problem, this thesis introduces a novel molecular doping method which utilizes acceptor molecules mixed with a polymer. This combination results in a dopant blend that is simple to apply onto epigraphene, and capable of providing controllable, potent, and homogeneous doping over large areas. This technique opens many different avenues for potential applications, three of which are explored in this work.
The doping method was successfully used to create practical graphene quantum resistance standards, which meet the stringent criteria for use in precision measurements of resistance.
Doped epigraphene was also used to develop magnetic field sensors, which rival and even surpass the best graphene-based Hall sensors reported in literature thus far. These Hall sensors also demonstrated promising performance at high temperatures, with the potential to one day outmatch industrial sensors.
Lastly, doped epigraphene was used to create a proof-of-concept terahertz detector. It was found that an optimized device could potentially allow for the creation of detector arrays that can provide ultra-sensitive detection across the entire terahertz range, and revolutionize sensors used in next-generation space telescopes.
To solve this problem, this thesis introduces a novel molecular doping method which utilizes acceptor molecules mixed with a polymer. This combination results in a dopant blend that is simple to apply onto epigraphene, and capable of providing controllable, potent, and homogeneous doping over large areas. This technique opens many different avenues for potential applications, three of which are explored in this work.
The doping method was successfully used to create practical graphene quantum resistance standards, which meet the stringent criteria for use in precision measurements of resistance.
Doped epigraphene was also used to develop magnetic field sensors, which rival and even surpass the best graphene-based Hall sensors reported in literature thus far. These Hall sensors also demonstrated promising performance at high temperatures, with the potential to one day outmatch industrial sensors.
Lastly, doped epigraphene was used to create a proof-of-concept terahertz detector. It was found that an optimized device could potentially allow for the creation of detector arrays that can provide ultra-sensitive detection across the entire terahertz range, and revolutionize sensors used in next-generation space telescopes.
Styrkeområden
Nanovetenskap och nanoteknik
Produktion
Materialvetenskap
Fundament
Grundläggande vetenskaper
Drivkrafter
Innovation och entreprenörskap
Infrastruktur
Myfab (inkl. Nanotekniklaboratoriet)
Ämneskategorier (SSIF 2011)
Signalbehandling
Annan elektroteknik och elektronik
Den kondenserade materiens fysik
ISBN
978-91-7905-309-3
Doktorsavhandlingar vid Chalmers tekniska högskola. Ny serie: 4776
Utgivare
Chalmers
Kollektorn, Kemivägen 9
Opponent: Prof. Sophie Guéron, Laboratoire de Physique des Solides Orsay, Université Paris Sud, France