Ion-beam-induced bending of semiconductor nanowires
Artikel i vetenskaplig tidskrift, 2018

semiconductor nanowires

electron microscopy

in situ transmission

radiation damage

ion irradiation-induced bending

Författare

Imran Hanif

The University of Huddersfield

Osmane Camara

The University of Huddersfield

Matheus A Tunes

The University of Huddersfield

Robert W. Harrison

The University of Huddersfield

Graeme Greaves

The University of Huddersfield

Stephen E. Donnelly

The University of Huddersfield

Jonathan A. Hinks

The University of Huddersfield

Nanotechnology

0957-4484 (ISSN) 1361-6528 (eISSN)

Vol. 29 33 335701-

Ämneskategorier

Atom- och molekylfysik och optik

Annan fysik

Annan materialteknik

DOI

10.1088/1361-6528/aac659

Mer information

Senast uppdaterat

2021-03-18