Ion-beam-induced bending of semiconductor nanowires
Artikel i vetenskaplig tidskrift, 2018
semiconductor nanowires
electron microscopy
in situ transmission
radiation damage
ion irradiation-induced bending
Författare
Imran Hanif
University of Huddersfield
Osmane Camara
University of Huddersfield
Matheus A Tunes
University of Huddersfield
Robert W. Harrison
University of Huddersfield
Graeme Greaves
University of Huddersfield
Stephen E. Donnelly
University of Huddersfield
Jonathan A. Hinks
University of Huddersfield
Nanotechnology
0957-4484 (ISSN) 1361-6528 (eISSN)
Vol. 29 33 335701-Ämneskategorier
Atom- och molekylfysik och optik
Annan fysik
Annan materialteknik
DOI
10.1088/1361-6528/aac659