Ion-beam-induced bending of semiconductor nanowires
Artikel i vetenskaplig tidskrift, 2018
semiconductor nanowires
electron microscopy
in situ transmission
radiation damage
ion irradiation-induced bending
Författare
Imran Hanif
The University of Huddersfield
Osmane Camara
The University of Huddersfield
Matheus A Tunes
The University of Huddersfield
Robert W. Harrison
The University of Huddersfield
Graeme Greaves
The University of Huddersfield
Stephen E. Donnelly
The University of Huddersfield
Jonathan A. Hinks
The University of Huddersfield
Nanotechnology
0957-4484 (ISSN) 1361-6528 (eISSN)
Vol. 29 33 335701-Ämneskategorier
Atom- och molekylfysik och optik
Annan fysik
Annan materialteknik
DOI
10.1088/1361-6528/aac659