Modeling Tunnel Junctions for VCSELs: A Self-Consistent NEGF-DD Approach
Paper i proceeding, 2020

In this work we investigate carrier transport in tunnel junctions for vertical-cavity surface-emitting lasers by a novel self-consistent simulation framework for semiconductor quantum devices. Based on a Poisson-drift-diffusion foundation, in this approach quantum features are described through a nonequilibrium Green's function formalism. The simulator is validated through a comparison with experimental results.

Författare

Alberto Tibaldi

Politecnico di Torino

Alberto Gullino

Politecnico di Torino

Jesus Gonzalez Montoya

Politecnico di Torino

Matteo Alasio

Politecnico di Torino

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

P. Debernardi

Politecnico di Torino

M. Goano

Politecnico di Torino

Marco Vallone

Politecnico di Torino

Giovanni Ghione

Politecnico di Torino

Enrico Bellotti

Boston University

Francesco Bertazzi

Politecnico di Torino

Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD

21583234 (ISSN)

Vol. 2020-September 67-68 9217684

2020 International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2020
Turin, Italy,

Ämneskategorier

Atom- och molekylfysik och optik

Annan fysik

Annan elektroteknik och elektronik

DOI

10.1109/NUSOD49422.2020.9217684

Mer information

Senast uppdaterat

2021-05-17