Transparent Ru–Si–O/In–Ga–Zn–O MESFETs on flexible polymer substrates
Artikel i vetenskaplig tidskrift, 2018

With the development of novel device applications, e.g., in the field of Internet of Things or point-of-care personalized diagnostic systems, came an increased demand for MESFETs for fast and low-power consumption integrated circuits and active-matrix displays. In this paper, we present fabrication and characterization of transparent Ru–Si–O/In–Ga–Zn–O MESFETs on flexible substrates. The use of transparent conducting oxide, namely, Ru–Si–O, as Schottky gate electrode, allows for processing the devices at room temperature, enabling the utilization of such low-temperature substrates as polyethylene terephthalate foil and paper. It was shown that tuning the device geometry allows realization of transistors providing on-current up to 2 mA, while the highest on-to-off current ratio equals 2 × 105, with off-current below 1 nA, carrier mobility in the channel exceeds 9 cm2·V−1·s−1, and subthreshold swing is below 250 mV·decade−1

Amorphous In–Ga–Zn–O (a-IGZO)


Schottky barrier


Transparent amorphous oxide semiconductors (TAOSs)


J. Kaczmarski

Instytut Technologii Elektronowej (ITE)

A. Taube

Politechnika Warszawska

Instytut Technologii Elektronowej (ITE)

M. A. Borysiewicz

Instytut Technologii Elektronowej (ITE)

Marcin Mysliwiec

Instytut Technologii Elektronowej (ITE)

Politechnika Warszawska

Krzysztof Piskorski

Instytut Technologii Elektronowej (ITE)

Krystyna Marta Stiller


E. Kaminska

Instytut Technologii Elektronowej (ITE)

IEEE Transactions on Electron Devices

0018-9383 (ISSN)

Vol. 65 1 129-135 7855743




Annan elektroteknik och elektronik



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