Ultralow-loss silicon nitride waveguides for nonlinear optics
Doktorsavhandling, 2021
Silicon nitride is a dielectric material featuring a relatively large nonlinear-index coefficient and a broadband transparency window, from ultraviolet to mid-infrared. Its refractive index contrast to silica allows high confinement and controlling the dispersion with the waveguide geometry. This material platform has emerged in the past years as a workhorse for nonlinear optics applications that rely on the Kerr effect, from microcomb generation to parametric amplification. In this thesis work, we focused on the development of advanced manufacturing techniques for the realization of ultralow-loss silicon nitride waveguides. Meter long high-confinement waveguides with record low losses in the order of 1.4 dB/m and dispersion-engineered microresonators with quality factors of 19 million are reported. Based on this technology, we demonstrated octave-spanning coherent microcombs and microcombs with photodetectable repetition rates occupying a device area less than 1 mm^2, i.e., one order of magnitude smaller than state of the art. The high yield and ultralow-loss silicon nitride waveguides also allowed us to achieve, for the first time, continuous-wave parametric amplification in an integrated waveguide, with a demonstrated gain of 9.5 dB and noise figure of 1.2 dB when operated in phase-sensitive mode.
ultralow loss
Kerr nonlinear optics
parametric amplifier
DKS microcombs
integrated waveguides
silicon nitride
Författare
Zhichao Ye
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
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Ämneskategorier
Nanoteknik
Annan elektroteknik och elektronik
ISBN
978-91-7905-458-8
Doktorsavhandlingar vid Chalmers tekniska högskola. Ny serie: 4925
Utgivare
Chalmers
Kollektorn, MC2, Chalmers. Zoom (Password: ZYdefence)
Opponent: Prof. John E. Bowers, UCSB, United States